PART |
Description |
Maker |
DDTD114GU-7-F DDTD133HU-7-F DDTD113EU DDTD113ZU DD |
Prebiased Transistors 500 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR 500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR GREEN, PLASTIC PACKAGE-3 NPN PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR
|
Diodes, Inc. Diodes Incorporated Diodes Inc.
|
S1P2655A03 S1P2655A05 S1P2655A01 S1P2655A02 S1P265 |
Linear integrated circuit. Input level TTL, CMOS 500 mA, 50 V, 7 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR SOP-16 500 mA, 50 V, 7 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR DIP-16 LT Series Water Resistant Linear Position Transducer, 76,2 mm [3.0 in] Electrical Travel, 1.0 % Linearity, Cable Termination, Item Number F58000203 Level Meter Linear integrated circuit. Input level DTL, TTL, PMOS, CMOS
|
ITT, Corp. TE Connectivity, Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
BC817DS BC817DS115 |
NPN general purpose double transistor; Package: SOT457 (SC-74); Container: Tape reel smd 500 mA, 45 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
|
MMPQ2222A |
500 mA, 40 V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
|
ON SEMICONDUCTOR
|
FMB2227AD87Z |
500 mA, 30 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
|
FAIRCHILD SEMICONDUCTOR CORP
|
BC817-16W Q62702-C2320 Q62702-C2323 Q62702-C2324 Q |
RES FIX, 324 OHM.125W 1% SMDA 500 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR NPN Silicon AF Transistor (For general AF applications High collector current High current gain) 500 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR From old datasheet system
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
TD62083AFNG TD62084AFNG |
500 mA, 50 V, 8 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR 8CH DARLINGTON SINK DRIVER
|
Toshiba Semiconductor
|
PPF440M |
N Channel MOSFET; Package: TO-254; ID (A): 5; RDS(on) (Ohms): 0.85; PD (W): 125; BVDSS (V): 500; Rq: 1; 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
Microsemi, Corp.
|
PPF430E |
N Channel MOSFET; Package: SMD-.5; ID (A): 2.6; RDS(on) (Ohms): 1.5; PD (W): 125; BVDSS (V): 500; Rq: 1; 4.3 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
|
PZTA06 MMBTA06 MPSA06 |
NPN General Purpose Amplifier(NPN通用放大 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
PIMN31 |
500 mA, 50 V NPN/NPN double resistor-equipped transistor; R1 = 1 kW, R2 = 10 kW
|
http://
|
|