PART |
Description |
Maker |
PDTA115ES PDTA115E PDTC115EU PDTA115EE PDTA115EEF |
PNP resistor-equipped transistors; R1 = 100 kOhm, R2 = 100 kOhm; Package: SOT416 (SC-75); Container: Tape reel smd PNP resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW 20 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 PNP resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW 20 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236 From old datasheet system PDTA115E series; PNP resistor-equipped transistors; R1 = 100 kOhm, R2 = 100 kOhm PNP resistor-equipped transistors; R1 = 100 kOhm, R2 = 100 kOhm; Package: SOT883 (SC-101); Container: Tape reel smd
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NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
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RN2967 RN2969 |
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
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Toshiba Semiconductor
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RN2966FE RN2961FE RN2962FE RN2963FE RN2964FE RN296 |
100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor)
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TOSHIBA[Toshiba Semiconductor]
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BCV64B BCV64 BCV64B_3 BCV64B215 |
PNP general purpose double transistor - Description: Schmitt Trigger; Package: SOT143B (SOT4); Container: Tape reel smd 100 mA, 30 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR From old datasheet system
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NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
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2PB709ARL_DG 2PB709ARL 2PB709ASL 2PB709ASL/DG 2PB7 |
45 V, 100 mA PNP general-purpose transistors 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB PLASTIC PACKAGE-3
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NXP Semiconductors N.V.
|
BC858CDXV6T1G |
General Purpose Dual PNP Transistor; Package: SOT-563, 6 LEAD; No of Pins: 6; Container: Tape and Reel; Qty per Container: 4000 100 mA, 30 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
|
ON Semiconductor
|
DA142JU-7 |
100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
|
DIODES INC
|
DDTA143FCA-7 DDTA113ZCA-7 |
100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR PLASTIC PACKAGE-3 TRANS PREBIASED PNP 200MW SOT-23 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
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Diodes, Inc.
|
MUN5111DW1T1G |
Dual Bias Resistor Transistors 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
|
ON Semiconductor
|
EMC4DXV5T5G |
Dual Common Base−Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
|
ON Semiconductor
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PMBTA92 PMBTA92215 PMBTA92-T |
100 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB PNP high-voltage transistor - Complement: PMBTA42 ; fT min: 50 MHz; hFE max:>40 ; hFE min: 40 ; I<sub>C</sub> max: 100 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 300 V; Package: SOT23 (TO-236AB); Container: Tape reel smd
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NXP Semiconductors
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BC309B BC307 BC307B BC307C BC308C |
Amplifier Transistors(PNP) 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
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Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc]
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