| PART |
Description |
Maker |
| S20GBJ40-C |
Voltage 200V ~800V 20.0Amp Glass Passivited Bridge Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|
| S25GBJ40-C S25GBJ20-C |
Voltage 200V ~800V 25.0Amp Glass Passivited Bridge Rectifiers
Voltage 200V ~800V 25.0Amp Glass Passivited Bridge Rectifiers
|
SeCoS Halbleitertechnologie GmbH
SeCoS Halbleitertechnol...
|
| SCDS106 |
VOLTAGE 800V 1.0 AMP Glass Passivated Super Fast Recovery Rectifier
|
SeCoS Halbleitertechnologie GmbH
|
| IRFU220B IRFR220B IRFU220BTLTUFP001 IRFU220BTUFP00 |
200V N-Channel B-FET / Substitute of IRFR220 & IRFR220A
200V N-Channel B-FET / Substitute of IRFU220 & IRFU220A
200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| SCD4003 |
VOLTAGE 200V ~ 1000V 1.0 AMP Glass Passivated Rectifier
|
SeCoS Halbleitertechnologie GmbH
|
| SFG08E200F SFG10S200F SFG10S600F SFG10S400F |
Voltage 200V ~ 600V 8.0 Amp Super Fast Recovery Rectifier
|
SeCoS Halbleitertechnologie GmbH
|
| SCDS103 SCDS101 SCDS10112 SCDS102 |
Voltage 50V ~ 200V 1.0 Amp Surface Mount Schottky Barrier Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|
| 2SC3151 2SC3151M 2SC3151L |
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管|晶体管|叩| 800V的五（巴西）总裁| 1.5AI（丙）|18VAR
TRANSISTOR | BJT | NPN | 800V V(BR)CEO | 1.5A I(C) | TO-218VAR
For Switching Regulators
|
Honeywell International, Inc.
SANYO[Sanyo Semicon Device]
|
| 1N4246GP 1N4247GP 1N4248GP 1N4245 1N4245GP |
Glass Passivated Junction Rectifier, Forward Current 1.0A, Reverse Voltage 400V
Glass Passivated Junction Rectifier, Forward Current 1.0A, Reverse Voltage 600V
Glass Passivated Junction Rectifier, Forward Current 1.0A, Reverse Voltage 800V
General Purpose Plastic Rectifier, Forward Current 1.0A, Reverse Voltage 200V
Glass Passivated Junction Rectifier, Forward Current 1.0A, Reverse Voltage 200V
|
Vishay
|
| NTE5869 NTE5850 NTE5866 NTE5861 NTE5863 NTE5862 NT |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 50V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A.
Silicon Power Rectifier Diode 6 Amp
Silicon Power Rectifier Diode, 6 Amp
Silicon Power Rectifier Diode / 6 Amp
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A.
|
NTE[NTE Electronics]
|
| FQD12N20TF |
200V N-Channel QFET; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel
|
FAIRCHILD SEMICONDUCTOR CORP
|
