PART |
Description |
Maker |
MBR0540W |
Low forward voltage drop, Guard ring construction forTransient protection
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TY Semiconductor Co., L...
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BAT64-04W BAT64-05W BAT64-06W BAT64W BAT64-W Q6270 |
Silicon Schottky Diodes (For low-loss/ fast-recovery/ meter protection/ bias isolation and clamping applications Integrated diffused guard ring) Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) Silicon Schottky Diodes (For low-loss fast-recovery meter protection bias isolation and clamping applications Integrated diffused guard ring) From old datasheet system
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SIEMENS AG SIEMENS[Siemens Semiconductor Group]
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FS1UM-18A |
Standard Recovery Rectifier; Forward Current:15A; Forward Current Average:9.5A; Forward Current Avg Rectified, IF(AV):9.5A; Forward Surge Current Max, Ifsm:225A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes HIGH-SPEED SWITCHING USE
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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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FS1UM-16A |
Standard Recovery Rectifier; Forward Current:15A; Forward Current Average:9.5A; Forward Current Avg Rectified, IF(AV):9.5A; Forward Surge Current Max, Ifsm:225A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes HIGH-SPEED SWITCHING USE
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Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
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FS1UM-16A |
Standard Recovery Rectifier; Forward Current:15A; Forward Current Average:9.5A; Forward Current Avg Rectified, IF(AV):9.5A; Forward Surge Current Max, Ifsm:225A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
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Powerex Power Semiconductors Mitsubishi Electric Corporation
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GBJ30B GBJ30G |
Low forward voltage, high forward current
|
GeneSiC Semiconductor, ...
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200CMQ035 200CMQ045 200CMQ-SERIES 200CMQ040 |
SCHOTTKY RECTIFIER Guard ring for enhanced ruggedness and long term reliability Center tap module
|
Sangdest Microelectroni...
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BAT54AW BAT54SW BAT54CW |
Planar Schottky barrier diodes with an integrated guard ring for stress protection, encapsulated in a very small SOT323
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NXP Semiconductors
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1KSMBJ11A 1KSMBJ9.1A 1KSMBJ51A 1KSMBJ91A 1KSMBJ24A |
Standard Recovery Rectifier; Repetitive Reverse Voltage Max, Vrrm:600V; Forward Current Avg Rectified, IF(AV):1A; Non Repetitive Forward Surge Current Max, Ifsm:30A; Forward Voltage Max, VF:1.1V; Package/Case:DO-41 Silicon Avalanche Diodes - 1000W Surface Mount Transient Voltage Suppressor 硅雪崩二极管- 1000瓦表面贴装瞬态电压抑制器
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Littelfuse, Inc.
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2SJ626 2SJ626-T1B 2SJ626-T2B |
Small Signal Diode; Repetitive Reverse Voltage Max, Vrrm:30V; Forward Voltage Max, VF:1V; Vf Test Current:5mA; Power Dissipation, Pd:80mW; Package/Case:DO-7; Current Rating:150mA; Forward Current Max, If:150mA; Forward Voltage:1.0V MOS场效应管 MOS FIELD EFFECT TRANSISTOR Pch enhancement type MOS FET
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NEC, Corp. NEC[NEC]
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444CNQ040 |
SCHOTTKY RECTIFIER Guard ring for enhanced ruggedness and long term reliability
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Sangdest Microelectroni...
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