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ST2318SRG - ST2318SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.

ST2318SRG_7629312.PDF Datasheet

 
Part No. ST2318SRG
Description ST2318SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.

File Size 209.29K  /  7 Page  

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Stanson Technology



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Part: ST2310HI
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