PART |
Description |
Maker |
APTC60AM18SC |
143 A, 600 V, 0.018 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module
|
ADPOW[Advanced Power Technology]
|
SCTMU001F |
N-channel SiC power MOSFET
|
Rohm
|
S2301 |
N-channel SiC power MOSFET bare die
|
Rohm
|
S4003 |
N-channel SiC power MOSFET bare die
|
Rohm
|
S4105 |
N-channel SiC power MOSFET bare die
|
Rohm
|
S4002 |
N-channel SiC power MOSFET bare die
|
Rohm
|
S2206 S2206-16 |
N-channel SiC power MOSFET bare die
|
Rohm
|
LSIC1MO120E0160 |
LSIC1MO120E0160 1200 V N-channel, Enhancement-mode SiC MOSFET
|
Littelfuse
|
SCT3030AL |
N-channel SiC power MOSFET
|
Rohm
|
SCT3160KL |
N-channel SiC power MOSFET
|
Rohm
|
SCT3080AL |
N-channel SiC power MOSFET
|
Rohm
|
AM29LV010B-45RJC AM29LV010B-55JC AM29LV010B-55JE A |
A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET ST Package 100V Single N-Channel HEXFET Power MOSFET in a SO-8 package 80V Single N-Channel HEXFET Power MOSFET in a SO-8 package -40V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package 20V Dual N-Bidirectional HEXFET Power MOSFET in a 6-Lead FlipFET 30V N-Channel PowerTrench MOSFET 30VN沟道的PowerTrench MOSFET -12V Single P-Channel HEXFET Power MOSFET in a TSSOP-8 package x8闪存EEPROM 1 Mb (128K x 8) Uniform Sector, Flash Memory 128K X 8 FLASH 3V PROM, 70 ns, PQCC32 x8 Flash EEPROM x8闪存EEPROM
|
Toshiba, Corp. Advanced Micro Devices, Inc. Spansion, Inc.
|