| PART |
Description |
Maker |
| NX6410GH NX6410GH-AZ |
1 490 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.
InGaAsP MQW-DFB LASER DIODE
|
California Eastern Labs
|
| TQM6M9085 |
QUANTUM Tx Linear WEDGE 5.25x6mm SP8T Transmit Module
|
TriQuint Semiconductor
|
| M57714SH |
490-512MHz, 12.5V, 7W, FM MOBILE RADIO
|
Mitsubishi Electric Corporation
|
| M67749SH |
490-512MHz / 12.5V / 7W / FM PORTABLE RADIO
490-512MHz, 12.5V, 7W, FM PORTABLE RADIO
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| STK14C88-M |
32K x 8 AUTOSTORE nvSRAM QUANTUM TRAP CMOS NONVOLATILE STATIC RAM
|
Simtek
|
| EQ-432L |
EQ-432L is composed of an InAs Quantum Well Hall Element and a signal processing IC chip in a package
|
Asahi Kasei Microsystems
|
| EQ-731L |
EQ-731L is composed of an InAs Quantum Well Hall Element and a signal processing IC chip in a package
|
Asahi Kasei Microsystems
|
| M76DW63000A90ZT M76DW62000A M76DW62000A70ZT M76DW6 |
64Mbit (x8/ x16, Multiple Bank, Boot Block) Flash Memory and 8Mbit/4Mbit SRAM, 3V Supply, Multiple Memory Product
|
STMICROELECTRONICS[STMicroelectronics]
|
| M72DW64000B90ZT M72DW64000B M72DW64000B70ZT M72DW6 |
64Mbit (x8/ x16, Multiple Bank, Boot Block) Flash Memory and 16Mbit Pseudo SRAM, 3V Supply, Multiple Memory Product
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| H3YN-2 H3YN-41-Z H3YN H3YN-2-Z H3YN-21 H3YN-21-Z H |
Solid-state Timer (Miniature Timer with Multiple Time Ranges and Multiple Operating Modes)
|
http://
Omron Electronics LLC
|
| PD8931 PD8001 |
High quantum effciency, Very small dark current, High speed response
|
Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| M36WT864TF 8967 M36WV8B85ZA6T M36WT864 M36WT864B10 |
From old datasheet system
64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
|
STMICROELECTRONICS[STMicroelectronics]
|
