| PART |
Description |
Maker |
| PMV56XN PMV56XN-01 |
uTrenchMOS (tm) extremely low level FET
From old datasheet system
mTrenchMOS extremely low level FET
|
Philips
|
| PMF370XN |
N-channel mTrenchMOS extremely low level FET
N-channel uTrenchmos (tm) extremely low level FET
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| FMMT491A |
Very Low Equivalent Resistance, SOT23 NPN Rsilicon planar
|
TY Semiconductor Co., Ltd
|
| PMWD20XN |
Dual N-channel microTrenchMOS(tm) extremely low level FET
DUAL N-CHANNEL UTRENCHMOS EXTREMELY LOW LEVEL FET
|
NXP Semiconductors
Philips Semiconductors
|
| STP12N50M2 |
Extremely low gate charge
|
STMicroelectronics
|
| STP12N60M2 |
Extremely low gate charge
|
STMicroelectronics
|
| LPW-351202F LPW-351202J LPW-351202K LPW-1051202F L |
Extremely Low Resistance Power Wirewounds
|
IRC - a TT electronics Company.
|
| GFC048 |
N Channel Power MOSFET with extremely low RDS(on)
|
Gunter Seniconductor GmbH.
|
| FDG316P |
High performance trench technology for extremely low
|
TY Semiconductor Co., Ltd
|
| GFC034 |
N Channel Power MOSFET with extremely low RDS(on)
|
Gunter Seniconductor GmbH.
|
| PMZ250UN |
N-channel TrenchMOS extremely low level FET
|
NXP Semiconductors N.V.
|
| AP2121AK3.2TRE1 AP2121AN3.2TRE1 AP2121AK1.5TRE1 AP |
150mA EXTREMELY LOW NOISE LDO REGULATOR
|
BCD Semiconductor Manufacturing Limited
|
