| PART |
Description |
Maker |
| K5D5657ACM-F015 |
256Mb NAND and 256Mb Mobile SDRAM 256Mb的NAND闪存56Mb移动SDRAM
|
Samsung Semiconductor Co., Ltd.
|
| K5D5657ACM K5D5657ACM-F015 |
256Mb NAND and 256Mb Mobile SDRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HYB39S256160DCL-6 HYB39S256800DCL-6 HYB39S256800DC |
Polypropylene metallized tape wrap and epoxy filled - Snubber 256兆位同步DRAM
256 MBit Synchronous DRAM 256兆位同步DRAM
256M (16Mx16) PC133 3-3-3
256Mb (32Mx8) FBGA PC133 3-3-3
256Mb (16Mx16) FBGA PC133 3-3-3
256Mb (64Mx4) PC133 3-3-3
256Mb (64Mx4) FBGA PC133 3-3-3
256 MBit Synchronous DRAM
|
Infineon Technologies AG
Infineon Technologies A...
|
| HYB39S256400D HYB39S256400DTL-6 HYB39S256400DTL-7 |
256 MBit Synchronous DRAM
SDRAM Components - 256Mb (16Mx16) FBGA PC133 2-2-2
SDRAM Components - 256Mb (32Mx8) PC133 2-2-2
SDRAM Components - 256Mb (32Mx8) FBGA PC133 2-2-2
SDRAM Components - 256Mb (16Mx16) PC133 2-2-2
SDRAM Components - 256Mb (64Mx4) FBGA PC133 2-2-2
256-MBit Synchronous DRAM
|
INFINEON[Infineon Technologies AG]
|
| K4H560838E-TC/LB0 K4H560838E-TC/LA2 K4H560838E-TC/ |
DDR SDRAM 256Mb E-die (x4, x8) 256Mb的DDR SDRAM的电子芯片（了x4，x8
Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-PDIP -40 to 125
256Mb E-die DDR SDRAM Specification 66 TSOP-II
Dual Micropower Precision Low-Voltage Operational Amplifier 8-SOIC -55 to 125
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PLCC
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PDIP
DDR SDRAM 256Mb E-die (x4, x8)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HYS72V32301GR-7.5 HYS72V64300GR-7.5 HYS72V16300GR- |
3.3V 256MB SDRAM Module(3.3V 256MSDRAM 模块)
3.3V 128MB SDRAM Module(3.3V 128MSDRAM 模块)
3.3V 1GB SDRAM Module(3.3V 1GSDRAM 模块)
3.3V 256MB SDRAM Module(3.3V 256MSDRAM 模块) 3.3 256MB的内存模块（3.3 256M位内存模块）
3.3V 128MB SDRAM Module(3.3V 128MSDRAM 模块) 3.3 128MB的内存模块（3.3V28兆位内存模块
|
SIEMENS AG
|
| K4H561638D-TC_LB0 K4H560838D-TC_LA0 K4H560838D-TC_ |
256MB
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| NT256D64S88A0G |
256MB DIMM
|
Nanya Technology
|
| K4H560838D-NC_LA0 K4H560838D-NC_LA2 K4H560838D-NC_ |
256MB STSOPII
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HYM72V32M656BLT6-P HYM72V32M656BLT6-S HYM72V32M656 |
SDRAM - SO DIMM 256MB
|
Hynix Semiconductor
|
| HYS64T128020HDL-3.7-A HYS64T128020HDL-5-A |
256MB - 2GB, 200pin
|
Infineon
|
| K8A56EBC K8A57EBC K8A57EZC |
256Mb C-die NOR FLASH
|
Samsung semiconductor
|
