| PART |
Description |
Maker |
| D2PAKPD |
D2PAK Case
|
Central Semiconductor Corp
|
| 30KPA54A 30KPA84A 30KPA84C 30KPA132CA 30KPA43 30KP |
Diode TVS Single Uni-Dir 54V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 84V 30KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 84V 30KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 132V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 43V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 30V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 320V 30KW 2-Pin
Diode TVS Single Uni-Dir 400V 30KW 2-Pin Case P-600
Diode TVS Single Bi-Dir 30V 30KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 42V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 51V 30KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 51V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 58V 30KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 60V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 60V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 288V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 144V 30KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 72V 30KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 198V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 72V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 71V 30KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 66V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 66V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 108V 30KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 108V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 102V 30KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 102V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 132V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 78V 30KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 78V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 198V 30KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 64V 30KW 2-Pin Case P600 T/R
|
New Jersey Semiconductor
|
| LBE66B1 LBE66B1B LBE66B1CB LBE66B1U LBE66B2 LBE66B |
HEAT DISSIPATORS FOR PLASTIC CASE, CASE-MOUNTED SEMICONDUCTORS
|
List of Unclassifed Manufac...
List of Unclassifed Man...
|
| STB160NF03L 7460 |
N-CHANNEL 30V 0.0021 OHM - 160A D2PAK STRIPFET POWER MOSFET
N-CHANNEL 30V - 0.0021ohm - 160A D2PAK STripFET POWER MOSFET
N-CHANNEL 30V 0.0021 OHM - 160A D2PAK STRIPFET POWER MOSFET
From old datasheet system
N-CHANNEL 30V - 0.0021ohm - 160A D2PAK STripFET⑩ POWER MOSFET
N-CHANNEL 30V - 0.0021ohm - 160A D2PAK STripFETPOWER MOSFET N沟道30V 0.0021ohm - 160A章采用D2PAK STripFET⑩功率MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
STMicroelectronics N.V.
|
| LA363B5 LA363B5B LA363B5CB LA363B5U |
METAL CASE, CASE-MOUNTED SEMICONDUCTORS
|
CTS Corporation
|
| STP4NC80Z STB4NC80ZT4 STB4NC80Z-1 STB4NC80Z STP4NC |
N-CHANNEL 800V 2.4 OHM 4A TO-220 TO-220FP D2PAK I2PAK ZENER PROTECTED POWERMESH III MOSFET N沟道800V.4欧姆4A条到22020FP采用D2PAK I2PAK稳压第三MOSFET的保护POWERMESH
N-CHANNEL 800V - 2.4ohm - 4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH⑩III MOSFET N沟道800V 2.4ohm - 4A条TO-220/FP/D2PAK/I2PAK齐保护的PowerMESH⑩三MOSFET
N-CHANNEL 800V - 2.4ohm - 4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESHIII MOSFET
N-CHANNEL 800V - 2.4ohm - 4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH?III MOSFET
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| STB7NC80Z STB7NC80Z-1 STP7NC80ZFP STP7NC80Z STBB7N |
6.5 A, 800 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-CHANNEL MOSFET
New Generation Twisted Paired Multiconductor Audio Cable; Number of Conductors:4; Conductor Size AWG:22; No. Strands x Strand Size:7 x 30; Jacket Material:Polyvinylchloride (PVC); Shielding Material:Aluminum Foil/Polyester Tape
N-CHANNEL 800V - 1.3ohm - 6.5A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH⑩III MOSFET
N-CHANNEL 800V - 1.3 OHM - 6.5A TO-220/TO-220FP/D2PAK/I2PAK ZENER-PROTECTED POWERMESH III MOSFET
N-CHANNEL 800V - 1.3ohm - 6.5A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESHIII MOSFET
N-CHANNEL 800V - 1.3ohm - 6.5A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH?III MOSFET
|
ST Microelectronics
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| STB185N55 STP185N55 B185N55 P185N55 |
120 A, 55 V, 0.0035 ohm, N-CHANNEL, Si, POWER, MOSFET
N-channel 55V - 2.9mohm - 120A - D2PAK/TO-220 N沟道55V 2.9mohm - 120A D2PAK/TO-220
|
STMICROELECTRONICS[STMicroelectronics]
STMicroelectronics N.V.
|
| G8343-11 G8343-12 G8343-21 G8343-22 G8343-31 G8343 |
InGaAs PIN photodiode with preamp
Aluminum Snap-In Capacitor; Capacitance: 1500uF; Voltage: 160V; Case Size: 25x45 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 270uF; Voltage: 400V; Case Size: 35x25 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 180uF; Voltage: 400V; Case Size: 30x25 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 150uF; Voltage: 450V; Case Size: 25x30 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 390uF; Voltage: 200V; Case Size: 22x25 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 330uF; Voltage: 400V; Case Size: 25x45 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 1000uF; Voltage: 200V; Case Size: 25x50 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 270uF; Voltage: 400V; Case Size: 25x40 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 270uF; Voltage: 400V; Case Size: 30x30 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 270uF; Voltage: 400V; Case Size: 22x50 mm; Packaging: Bulk
Optoelectronic 光电
InGaAs PIN photodiode with preamp 铟镓砷PIN光电二极管和前置放大
|
HAMAMATSU[Hamamatsu Corporation]
NXP Semiconductors N.V.
Hamamatsu Photonics K.K.
|
| NTP27N06 NTB27N06 NTB27N06T4 |
Power MOSFET 27 Amps, 60 Volts N-Channel TO-220 and D2PAK
Power MOSFET 27 Amps, 60 Volts N?Channel TO?220 and D2PAK
Power MOSFET 27 Amps / 60 Volts NChannel TO220 and D2PAK
LASER MOD 670NM .95MW MVP ROUND
LASER MOD 635NM 4.9MW VHK ROUND 27 A, 60 V, 0.046 ohm, N-CHANNEL, Si, POWER, MOSFET
|
ONSEMI[ON Semiconductor]
|
