| PART |
Description |
Maker |
| SPP47N10L |
100-V MOS transistors in S-FET technology( 采用S-FET 技术制作的 100-V MOS 型晶体管) 47 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET
|
SIEMENS AG
|
| UPA675T UPA675T-T1 UPA675T-T2 UPA675T-A |
100 mA, 16 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
N-channel enhancement type MOS FET
|
NEC
|
| 2SJ0536 |
Silicon P-Channel MOS FET
Silicon P-Channel MOS FET 100 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
PANASONIC CORP
|
| RJK0701DPP-E0 RJK0701DPP-E0-15 RJK0701DPP-E0-T2 |
N-Channel MOS FET 75 V, 100 A, 3.8 m
N-Channel MOS FET 75 V, 100 A, 3.8 m?
|
Renesas Electronics Corporation
|
| 2SJ357 D10803EJ3V0DS00 2SJ357-T1 2SJ357-T2 |
P-channel MOS FET(-30V, -3A)
P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH
From old datasheet system
|
NEC[NEC]
|
| UPA1716 UPA1716G PA1716 UPA1716G-E1 UPA1716G-E2 |
Pch enhancement type power MOS FET
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
MOS Field Effect Transistor
|
NEC[NEC]
|
| RJK1003DPN-E0-T2 RJK1003DPN-E0-15 |
N-Channel MOS FET 100 V, 50 A, 11 m
N-Channel MOS FET 100 V, 50 A, 11 m?
|
Renesas Electronics Corporation
|
| 3SK300 |
Silicon N Channel MOS FET
Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier
|
Hitachi Semiconductor
|
| 2SK3212 2SK3212-E |
10 A, 100 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| 2SJ541 |
Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
| FAP-450 |
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 14A I(D) | TO-247VAR 晶体管| MOSFET的| N沟道| 500V五（巴西）直|4A条（丁）|47VAR
N-channel MOS-FET(500V, 0,38Ω, 14A, 190W)
N-channel MOS-FET(500V, 0,38楼?, 14A, 190W)
|
TOKO, Inc.
Fuji Electric
|
