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NX6353EP27-AZ - 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE FOR 9.8Gbps CPRI, 10G Ethernet APPLICATION

NX6353EP27-AZ_7611406.PDF Datasheet


 Full text search : 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE FOR 9.8Gbps CPRI, 10G Ethernet APPLICATION
 Product Description search : 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE FOR 9.8Gbps CPRI, 10G Ethernet APPLICATION


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125 A, 800 V, SILICON, RECTIFIER DIODE
150 A, 1200 V, SILICON, RECTIFIER DIODE
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350 A, 700 V, SILICON, RECTIFIER DIODE
400 A, 900 V, SILICON, RECTIFIER DIODE
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RESISTOR, WIRE WOUND, 2 W, 5 %, 350 ppm, 0.082 ohm, THROUGH HOLE MOUNT AXIAL LEADED
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RESISTOR, WIRE WOUND, 3 W, 5 %, 350 ppm, 0.013 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 2.5 W, 5 %, 350 ppm, 0.056 ohm, THROUGH HOLE MOUNT AXIAL LEADED
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