| PART |
Description |
Maker |
| USB-COM422 |
Future Technology Devices International Ltd
|
List of Unclassifed Manufac...
|
| FT245RQ-REEL FT245RL-REEL |
Future Technology Devices International Ltd. FT245R USB FIFO IC
|
List of Unclassifed Man...
Future Technology Devic...
|
| EP1AGX20CF780C6N EP1AGX35CF780C6N EP1AGX50CF780C6N |
The ArriaTM GX family of devices combines 3.125 gigabits per second (Gbps) serial transceivers with reliable packaging technology
|
Altera Corporation
|
| 2FB-XX-F-ST |
FUTURE BUS SIGNAL
|
Adam Technologies, Inc.
|
| 2FB-XX-F-V |
FUTURE BUS SIGNAL
|
Adam Technologies, Inc.
|
| 2FB-48-M |
FUTURE BUS 48 POSITION STRAIGHT MALE
|
Adam Technologies, Inc.
|
| 2FB96F 2FB96M 2FB30F |
FUTURE BUS 2.00mm CENTERLINE EIA STANDARD
|
Adam Technologies, Inc.
|
| 2FB60F 2FB60M 2FB120F 2FB120M 2FB192M 2FB10M 2FB19 |
FUTURE BUS 2.00mm CENTERLINE EIA STANDARD
|
Adam Technologies, Inc.
|
| EPC1 |
Configuration Devices for ACEX, APEX, FLEX & Mercury Devices
|
Altera Corporation
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| NANOSMDM075F |
PolySwitch PTC Devices / Circuit Protection Devices
|
Tyco Electronics
|
| P1804U P3100SCMC P3100SD A2106Z P2103A P2103ACMC P |
SIDACtor devices
solid state crowbar devices
|
TECCOR [Teccor Electronics]
TECCOR[Teccor Electronics]
|
|
