PART |
Description |
Maker |
CY7C1529AV18-200BZXI CY7C1529AV18-250BZXI |
72-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 8M X 9 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
CY7C1523KV18 CY7C1524KV18 |
72-Mbit DDR II SIO SRAM 2-Word Burst Architecture
|
Cypress Semiconductor
|
CY7C1393KV18 CY7C1393KV18-250BZI CY7C1394KV18 |
18-Mbit DDR II SIO SRAM Two-Word Burst Architecture
|
Cypress Semiconductor
|
CY7C1522V18 CY7C1522V18-167BZC CY7C1522V18-167BZI |
72-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
|
Cypress Semiconductor
|
CY7C1648KV18-400BZXC CY7C1648KV1812 |
144-Mbit DDR II SRAM Two-Word Burst Architecture (2.0 Cycle Read Latency)
|
Cypress Semiconductor
|
CY7C1668KV18-450BZXC CY7C1668KV18-550BZXC |
144-Mbit DDR II SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency)
|
Cypress
|
CAT64LC10ZJ CAT64LC10ZP CAT64LC10J-TE7 CAT64LC10J- |
18-Mbit QDR-II SRAM 4-Word Burst Architecture 18-Mbit DDR-II SRAM 2-Word Burst Architecture 36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) 4-Mbit (256K x 18) Flow-Through Sync SRAM SPI串行EEPROM SPI Serial EEPROM SPI串行EEPROM
|
Analog Devices, Inc.
|
K7J323682M K7J321882M |
1Mx36 & 2Mx18 DDR II SIO b2 SRAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
|
CY7C1319BV18-167BZC CY7C1319BV18-278BZC CY7C1321BV |
2M X 8 DDR SRAM, 0.45 ns, PBGA165 512K X 36 DDR SRAM, 0.45 ns, PBGA165 18-Mbit DDR-II SRAM 4-Word Burst Architecture
|
CYPRESS SEMICONDUCTOR CORP
|
R1QEA4418RBG-20IA0 R1QEA4436RBG-20IB0 R1QEA4436RBG |
144-Mbit DDR?II SRAM 2-word Burst Architecture ( 2.5 Cycle Read latency ) with ODT
|
Renesas Electronics Corporation
|
CY7C1566V1808 CY7C1566V18-400BZC CY7C1566V18-400BZ |
4M X 18 DDR SRAM, 0.45 ns, PBGA165 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)
|
Cypress Semiconductor, Corp.
|
CY7C1427AV18-250BZI |
36-Mbit DDR-II SRAM 2-Word Burst Architecture 4M X 9 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|