| PART |
Description |
Maker |
| 2075SERIES 2075-2000 2075-1000 2075-300 2075-3000 |
Delay 5000 /-100 ns, fixed high B.W. line Tr
Delay 500 /-20 ns, fixed high B.W. line Tr
Delay 4000 /-80 ns, fixed high B.W. line Tr
Delay 3000 /-60 ns, fixed high B.W. line Tr
Delay 300 /-20 ns, fixed high B.W. line Tr
Delay 1000 /-20 ns, fixed high B.W. line Tr
Delay 2000 /-40 ns, fixed high B.W. line Tr
FIXED HIGH B.W. DELAY LINE TR 1ns
|
Data Delay Devices Inc
|
| D2203 D2203UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-12.5V-1GHz,Push-Pull)(镀金多用DMOS射频硅场效应5W-12.5V-1GHz,推拉)
METAL GATE RF SILICON FET
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| D2282UK |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(750W-6V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应750W-6V-1GHz,单端)
|
SemeLAB
SEME-LAB[Seme LAB]
|
| D2212 D2212UK D2002 D2005 |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(10W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应10W-12.5V-1GHz,单端)
|
SemeLAB
SEME-LAB[Seme LAB]
|
| MAX9985ETX MAX9985ETXT MAX9985ETX-T MAX9985ETX_ MA |
Dual, SiGe, High-Linearity, 700MHz to 1000MHz Downconversion Mixer with LO Buffer/Switch
|
MAXIM[Maxim Integrated Products]
|
| TIM7179-12UL |
HIGH POWER P1dB=41.5dBm at 7.1GHz to 7.9GHz
|
Toshiba Semiconductor
|
| TIM7179-16UL |
HIGH POWER P1dB=42.5dBm at 7.1GHz to 7.9GHz
|
Toshiba Semiconductor
|
| TIM7179-4UL |
HIGH POWER P1dB=36.5dBm at 7.1GHz to 7.9GHz
|
Toshiba Semiconductor
|
| ICS8432I-51 ICS8432-51I ICS8432BYI51 ICS8432BYI-51 |
700MHz, Crystal Oscillator-to-LVPECL Frequency Synthesizer. Industrial Temperature. (P)
From old datasheet system
700MHZ, CRYSTAL-TO-3.3V DIFFERENTIAL LVPECL FREQUENCY SYNTHESIZER
|
http://
ICST[Integrated Circuit Systems]
|
| D2002UK |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-28V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应5W-28V-1GHz,单端)
|
SemeLAB
Seme LAB
|
| CFZ25-102-GB CFZ25-102-GT CFZ25-102-JB CFZ25-102-J |
HIGH VOLTAGE CARBON RESISTORS 1/8 WATT to 3 WATT
|
RCD COMPONENTS INC.
|
