| PART |
Description |
Maker |
| SK100DAL100D SK100DB100D |
NPN POWER DARLUNGTON MODULES 100A 1000V 100 A, 2 CHANNEL, NPN, Si, POWER TRANSISTOR
NPN Power Darlington Modules
|
Semikron International
|
| VUO28-08NO7 VUO28-06NO7 |
Power Modules/Rectifier Bridge Modules: Three Phase Diode Bridges
|
IXYS
|
| VUO85-16NO7 |
Power Modules/Rectifier Bridge Modules: Three Phase Diode Bridges
|
IXYS
|
| MDD312-12N1 L102 MDD312-18N1 MDD312-14N1 MDD312-16 |
Thyristor and Rectifiers Modules
High Power Diode Modules
CAT6A PLENUM, GREEN, SPOOBULK CABLE
|
IXYS Corporation
|
| VBE17-12NO7 |
Power Modules/Rectifier Bridge Modules: Single Phase Diode Bridges with Fast Recovery Diodes
|
IXYS
|
| PKA2432PIL PKA2231CI PKA2231PI PKA2000 PKA2211CI P |
V(in): -0.5 to 36V; 25-40W DC/DC power module
25?40 W DC/DC Power Modules 24 V Input Series
25-40 W DC/DC Power Modules 24 V Input Series 25-40中西区区议会/ DC电源模块24 V输入系列
|
Ericsson Microelectronics
ERICSSON[Ericsson]
|
| RM60CZ-2H RM60DZ-2H RM60CZ-H RM60DZ-H RM60DZ-M RM6 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| MDO500 MDO500-12N1 MDO500-14N1 MDO500-16N1 MDO500- |
High Power Diode Modules
High Power Diode Modules 560 A, 1400 V, SILICON, RECTIFIER DIODE
High Power Diode Modules 大功率二极管模块
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| QM100HA-H QM100HY-H |
MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| VSKDU162_12PBF VSKDU162 VSKDU162/12PBF |
HEXFRED? Ultrafast Diodes, 100 A (New INT-A-PAKTM Power Modules)
HEXFRED庐 Ultrafast Diodes, 100 A (New INT-A-PAKTM Power Modules)
HEXFRED㈢ Ultrafast Diodes, 100 A (New INT-A-PAKTM Power Modules)
|
Vishay Siliconix
|
