PART |
Description |
Maker |
MSB31TK-1 |
ULTRA BRIGHT RED LED LAMP ULTRA HIGH BRIGHTNESS RED LED LAMP SOCKET, FREE, 7WAY; Connector type:Circular; Gender:Socket; Ways, No. of:7; Termination method:Screw terminal; Material, contact:Machined solid brass, nickel plated; Plating, contact:Nickel; Series:BUCCANEER; Contact style:Socket; RoHS Compliant: Yes
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MICRO-ELECTRONICS[Micro Electronics]
|
VERTICAL SOLDERCUP 772-E09-113R001 772-E15-113R051 |
MALE-DIP SOLDER-MACHINED MALE-DIP SOLDER-MACHINED-ECONOMY
|
List of Unclassifed Manufacturers
|
ZW.../...FST |
Cemented Resistors with Push-on Terminals, All welded construction, Fast - on terminals for a reliable electrical contact, Taps and insulated windings on a common core available (please contact factory), Suited for a customer design
|
Vishay
|
SPD-020-XXX-BC-1X SPD-030-XXX-BC-1X |
Sockets DIP Machined Pins
|
Champion
|
CM600HA-28H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules HIGH POWER SWITCHING USE INSULATED TYPE 大功率开关使用绝缘型
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation Powerex, Inc.
|
RIGHTANGLE 774-E09-113R001 774-E15-113R011 774-E15 |
MALE-0.370 RIGHT ANGLE MALE-0370 RIGHT ANGLE-MACHINED-ECONOMY
|
List of Unclassifed Manufacturers List of Unclassifed Manufac... List of Unclassifed Man...
|
BCR16A BCR16B BCR16C BCR16E |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE A, B, C : NON-INSULATED TYPE E : INSULATED TYPE
|
Mitsubishi Electric Corporation
|
02-08-1201 |
Crimp Socket Contact; Wire Size (AWG):18-24; Contact Material:Brass; Contact Plating:Gold; Contact Termination:Crimp PHOSPHOR BRONZE, TIN (35) OVER COPPER FINISH, WIRE TERMINAL
|
Molex, Inc.
|
BCR16B BCR16C BCR16E |
MEDIUM POWER USE A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Sem... Mitsubishi Electric Corporation
|
HDSOLDERCUP HDVERTICAL 780-M26-113R051 780-MYY-113 |
MALE-HIGH DENSITY MALE-HIGH DENSITY-MACHINED CONTACTS-VERTICAL
|
List of Unclassifed Manufacturers List of Unclassifed Man...
|
IRG4BC40K |
Insulated Gate Bipolar Transistors (IGBTs)(短路额定超快速绝缘栅型双极型晶体 绝缘门双极晶体管IGBTs)(短路额定超快速绝缘栅型双极型晶体管) INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A) 600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package
|
International Rectifier, Corp. IRF[International Rectifier]
|
PM200CSE060 |
FLAT-BASE TYPE INSULATED INSULATED PACKAGE 平性基地型绝缘绝缘包装 FLAT-BASE TYPE INSULATED PACKAGE
|
Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor]
|