PART |
Description |
Maker |
FQI32N20C FQB32N20C FQB32N20CTM |
200V N-Channel Advance Q-FET C-Series 200V N-Channel MOSFET 28 A, 200 V, 0.082 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
FQPF10N20L |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 6.8A I(D) | TO-220F 晶体管| MOSFET的| N沟道| 200伏五(巴西)直| 6.8AI(四)|20F 200V LOGIC N-Channel MOSFET
|
Fairchild Semiconductor, Corp.
|
FQD10N20 FQU10N20 FQP10N20 FQ10N20 FQD10N20TM FQU1 |
200V N-Channel MOSFET CAP 3900PF 50V 1% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22 200 N-Channel MOSFET 200V N-Channel QFET
|
Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor] http://
|
IRF9240 |
CAP CER 250VAC 100PF X7R 1808 11 A, 200 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA -11A, -200V, 0.500 Ohm, P-Channel Power MOSFET -11A -200V 0.500 Ohm P-Channel Power MOSFET 11A/ -200V/ 0.500 Ohm/ P-Channel Power MOSFET
|
Intersil, Corp. INTERSIL[Intersil Corporation]
|
FQU630 FQD630 FQD630TM |
200V N-Channel QFET 200V N-Channel MOSFET(N沟道增强型MOS场效应管(漏电流7A, 漏源电压200V,导通电.4Ω
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation
|
IRFB42N20D |
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=200V/ Rds(on)max=0.055ohm/ Id=44A)
|
International Rectifier
|
IRFD210 |
200V Single N-Channel HEXFET Power MOSFET in a HEXDIP package Power MOSFET(Vdss=200V, Rds(on)=1.5ohm, Id=0.60A)
|
International Rectifier
|
FQI10N20C FQB10N20C FQB10N20CTM FQI10N20CTU |
200V N-Channel MOSFET 200V N-Channel Advance QFET C-series
|
Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
|
IRFW630 IRFW630B IRFI630 IRFI630B IRFI630BTUFP001 |
200V N-Channel B-FET / Substitute of IRFI630A 200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
IRHNA57260 IRHNA54260 IRHNA58260 IRHNA57060 IRHNA5 |
200V N-CHANNEL RADIATION HARDENED POWER MOSFET 200V, N-CHANNEL
|
IRF[International Rectifier]
|