| PART |
Description |
Maker |
| PMGD290XN PMGD290XN115 GD290XN115 |
Dual N-channel mTrenchMOS extremely low level FET
From old datasheet system
Dual N-channel uTrenchmos (tm) extremely low level FET 860 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| PMWD20XN |
Dual N-channel microTrenchMOS(tm) extremely low level FET
DUAL N-CHANNEL UTRENCHMOS EXTREMELY LOW LEVEL FET
|
NXP Semiconductors
Philips Semiconductors
|
| ADA4077-2-ARMZ ADA4077-2BRZ-R7 ADA4077-2BRZ-RL ADA |
The ADA4077-2 is a dual amplifier featuring extremely low offset voltage and drift and low input bias current, noise, and power consumption.
|
Analog Devices
|
| STF5N60M2 |
Extremely low gate charge
|
STMicroelectronics
|
| HCU65R600T |
Extremely low switching loss
|
SemiHow Co.,Ltd.
|
| STP12N50M2 |
Extremely low gate charge
|
STMicroelectronics
|
| DTP9531 DTP953113 |
P-Channel 30 V (D-S) MOSFET Extremely low RDS(on)
|
DinTek Semiconductor Co,.Ltd
|
| DN100S |
Extremely low collector-to-emitter saturation voltage
|
KODENSHI KOREA CORP.
|
| FCL10A015 |
Extremely Low Forward Voltage drop Diode
|
NIEC[Nihon Inter Electronics Corporation]
|
| GFC260 |
N Channel Power MOSFET with extremely low RDS(ON)
|
Gunter Seniconductor GmbH.
|
| 21DQ03L |
Extremely Low Forward Voltage drop Diode
|
Nihon Inter Electronics Corporation
|
| GFC048 |
N Channel Power MOSFET with extremely low RDS(on)
|
Gunter Seniconductor GmbH.
|
