| PART |
Description |
Maker |
| IRHLUB7930Z4 IRHLUB7970Z410 JANSR2N7626UB |
RADIATION HARDENED
RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (UB)
|
International Rectifier
|
| IRHLF6970Z4 IRHLF6930Z4 |
RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE
|
IRF[International Rectifier]
|
| IRHLG7670Z4 |
RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (MO-036AB)
|
International Rectifier
|
| IRHLA7970Z4 |
RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (14-LEAD FLAT PACK
|
International Rectifier
|
| IRHLA7670Z4 |
RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (14-LEAD FLAT PACK)
|
International Rectifier
|
| IRHLNM83Y20 IRHLNM87Y20 IRHLNM87Y20-15 |
RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT
Simple Drive Requirements
|
International Rectifier
|
| IRHLUC730Z4 IRHLUC770Z4 2N7617UC IRHLUC770Z4-15 |
RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT
Simple Drive Requirements
|
International Rectifier
|
| HCTS374D HCTS374DMSR HCTS374HMSR HCTS374K HCTS374K |
From old datasheet system
Radiation Hardened Octal D-Type Flip-Flop, Three-State, Positive Edge Triggered
Radiation Hardened Octal Transparent Latch/ Three-State
|
INTERSIL[Intersil Corporation]
|
| HS-2510RH 5962D9568601VPA HS9-2510RH-Q HS7-2510RH- |
Radiation Hardened High Slew Rate Operational Amplifier
Radiation Hardened High Slew Rate Operational Amplifier OP-AMP, 8000 uV OFFSET-MAX, 12 MHz BAND WIDTH, CDIP8
CAP TANT LOESR 330UF 10V 20% SMD
Radiation Hardened High Slew Rate
Operational Amplifier(抗辐射高输出电压转换速率、低偏置电流运算放大
|
Intersil, Corp.
Intersil Corporation
|
| 5962F0324801QXC 5962F0324801VXC ISL74422BRH ISL744 |
Radiation Hardened/ 9A/ Non-Inverting Power MOSFET Driver
Radiation Hardened, 9A, Non-Inverting Power MOSFET Driver 辐射硬化9A条，非逆变电源的MOSFET驱动
5V; radiation hardened, 9A, non-inverting power MOSFET driver. For switching power supplies, DC/DC converters, motor controllers
|
Intersil Corporation
Intersil, Corp.
|
| FSPYE234D1 FSPYE234F4 FN4873 FSPYE234R4 FSPYE234F |
From old datasheet system
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 9 A, 250 V, 0.215 ohm, N-CHANNEL, Si, POWER, MOSFET
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射，抗SEGR N沟道功率MOSFET（抗辐射沟道马鞍山场效应管）
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
