PART |
Description |
Maker |
AO6601 MC6601 |
N & P-Channel 32-V (D-S) MOSFET High performance trench technology
|
ShenZhen FreesCale Electronics. Co., Ltd
|
MCD407 |
P-Channel 60-V (D-S) MOSFET High performance trench technology
|
ShenZhen FreesCale Electronics. Co., Ltd
|
AO4704 |
N-Channel 30-V (D-S) MOSFET High performance trench technology
|
ShenZhen FreesCale Electronics. Co., Ltd
|
MCD442 |
N-Channel 60-V (D-S) MOSFET High performance trench technology
|
ShenZhen FreesCale Electronics. Co., Ltd
|
AO6415 MC6415 |
P-Channel 20-V (D-S) MOSFET High performance trench technology
|
ShenZhen FreesCale Electronics. Co., Ltd
|
AO7407 MC7407 |
P-Channel 20-V (D-S) MOSFET High performance trench technology
|
ShenZhen FreesCale Electronics. Co., Ltd
|
MC8807L |
P-Channel 20-V (D-S) MOSFET High performance trench technology
|
ShenZhen FreesCale Electronics. Co., Ltd
|
AO4801 |
P-Channel 20-V (D-S) MOSFET High performance trench technology
|
ShenZhen FreesCale Electronics. Co., Ltd
|
FDC6318P |
High performance trench technology for extremely low R
|
TY Semiconductor Co., Ltd
|
FDG6316P |
High performance trench technology for extremely low RDS(ON)
|
TY Semiconductor Co., L...
|
FDC608PZ |
High performance trench technology for extremely low RDS
|
TY Semiconductor Co., Ltd
|
FDG328P |
High performance trench technology for extremely low RDS(ON)
|
TY Semiconductor Co., L...
|