| PART |
Description |
Maker |
| KSM5800 |
High performance trench technology for extermly low Rdson
|
Kersemi Electronic Co.,...
|
| Q67040S4722 Q67040S4724 IGP30N60T IGW30N60T |
1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ...
LOW LOSS IGBT IN TRENCH AND FILEDSTOP TECHNOLOGY
|
INFINEON[Infineon Technologies AG]
|
| AM2343P |
Low rDS(on) trench technology
|
TY Semiconductor Co., Ltd
|
| FDG316P |
High performance trench technology for extremely low
|
TY Semiconductor Co., Ltd
|
| FDC6312P |
High performance trench technology for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| V23990-P630-A44-PM |
Trench Fieldstop Technology IGBT4 for low saturation loss
|
Vincotech
|
| FDG328P |
High performance trench technology for extremely low RDS(ON)
|
TY Semiconductor Co., L...
|
| SIGC04T60GS |
For drives-, white goods and resonant applications, Trench- and Fieldstop technology; low threshold voltage
|
Infineon
|
| IKP15N60T |
Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
|
Infineon Technologies AG
|
| FQB3N60 |
This N-channel MOSFETS use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
|
Kersemi Electronic Co.,...
|
| IGW40T120 Q67040-S4519 GW40T120 |
From old datasheet system
Low Loss IGBT in Trench and Fieldstop technology
IGBTs & DuoPacks - 40A 1200V TO247 IGBT
|
INFINEON[Infineon Technologies AG]
|
| IRF7329PBF IRF7329TRPBF IRF7329PBF-15 |
HEXFET Power MOSFET
Ultra Low On-Resistance
Trench Technology
|
IRF[International Rectifier]
|
