| PART |
Description |
Maker |
| AM2321P |
Low rDS(on) trench technology Low thermal impedance
|
TY Semiconductor Co., Ltd
|
| AUIRGPS4070D0 |
Low VCE (on) Trench IGBT Technology
|
Infineon Technologies A...
|
| FDG330P |
High performance trench technology for extremely low R
|
TY Semiconductor Co., L...
|
| FDG316P |
High performance trench technology for extremely low
|
TY Semiconductor Co., Ltd
|
| FDN327N |
High performance trench technology for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| FDN8601 |
High performance trench technology for extremely low rDS(on)
|
TY Semiconductor Co., Ltd
|
| IRF7663PBF |
Trench Technology, Ultra Low On-Resistance, P-Channel MOSFET
|
International Rectifier
|
| Q67040-S4650 IHP10T120 |
Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
|
INFINEON[Infineon Technologies AG]
|
| IKP15N60T |
Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
|
Infineon Technologies AG
|
| Q67040-S4521 IGW60T120 |
IGBTs & DuoPacks - 60A 1200V TO247 IGBT
Low Loss IGBT in Trench and Fieldstop technology 在戴低损失和场终止IGBT技
|
INFINEON[Infineon Technologies AG]
|
