| PART |
Description |
Maker |
| 1SS337 |
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)
|
TOSHIBA[Toshiba Semiconductor]
|
| 1SS352 |
ULTRA HIGH SPEED SWITCHING APPLICATION DIODE
|
Guangdong Kexin Industrial Co.,Ltd
|
| 1SS344 |
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)
|
Toshiba Semiconductor
|
| 1SS226 |
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)
|
TOSHIBA[Toshiba Semiconductor]
|
| 1SS352 |
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)
|
TOSHIBA[Toshiba Semiconductor]
|
| HN2D02FU E001993 |
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS)
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| KDS196 |
SILICON EPITAXIAL PLANAR DIODE (ULTRA HIGH SPEED SWITCHING)
|
KEC Holdings
KEC(Korea Electronics)
|
| KDS200 |
SILICON EPITAXIAL PLANAR DIODE (ULTRA HIGH SPEED SWITCHING)
|
Korea Electronics (KEC)
KEC(Korea Electronics)
|
| KDS201 |
SILICON EPITAXIAL PLANAR DIODE (ULTRA HIGH SPEED SWITCHING)
|
Korea Electronics (KEC)
KEC(Korea Electronics)
|
| KDS193 |
SILICON EPITAXIAL PLANAR DIODE (ULTRA HIGH SPEED SWITCHING)
|
KEC Holdings
KEC[KEC(Korea Electronics)]
|
| 1SS301 E000262 |
From old datasheet system
DIODE (ULTRA HIGH SPEED SWITCHING APLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
