| PART |
Description |
Maker |
| IXBH12N300 |
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| 2SC3072 |
High DC current gain. Low collector saturation voltage. High power dissipation.
|
TY Semiconductor Co., Ltd
|
| IXBT10N170 IXBH10N170 |
Discrete IGBTs
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| IXBL64N250 |
High Voltage, High Gain BiMOSFETTM
|
IXYS Corporation
|
| LM1458 LM741 LM1558 CA741 CA741C CA1458 LM741C CA1 |
HIGH-GAIN SINGLE AND DUAL OPERATIONAL AMPLIFIERS FOR MILITARY INDUSTRIAL AND COMMERCIAL APPLICATIONS
High-gain operational amplifier
|
Harris Corporation
Harris Semiconductor
|
| 2SD2318 |
High DC current gain. Low saturation voltage.Collector-base voltage VCBO 80 V
|
TY Semiconductor Co., Ltd
|
| 2SC1622 2SC1622A 2SC1622A-T2B 2SC1622A-L 2SC1622A- |
Low-frequency high-gain amplification silicon Tr.
AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
|
NEC[NEC]
|
| STT818B07 |
High gain low voltage PNP power transistor
|
STMicroelectronics
|
| 2SD2114K 2SD2144S A5800324 2SD2114KW 2SD2144SU 2SD |
High-current Gain MediumPower Transistor (20V/ 0.5A)
High-current Gain MediumPower Transistor (20V, 0.5A)
High-current Gain Medium Power Transistor (20V,0.5A)
From old datasheet system
|
Rohm CO.,LTD.
ROHM[Rohm]
|
