Part Number Hot Search : 
P1005A MS1280 B3862 DN254007 2N5533 HYB25 MP5013E DDA114EH
Product Description
Full Text Search

IRG7PH50K10DPBF - Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode

IRG7PH50K10DPBF_7512591.PDF Datasheet


 Full text search : Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
 Product Description search : Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode


 Related Part Number
PART Description Maker
IRGP420U GP420U Insulated Gate Bipolar Transistors (IGBTs)(瓒?揩???缂?????????朵?绠?
500V Discrete IGBT in a TO-3P (TO-247AC) package
Insulated Gate Bipolar Transistors (IGBTs)(超快速绝缘栅型双极型晶体 绝缘门双极晶体管(IGBTs)(超快速绝缘栅型双极型晶体管)
International Rectifier, Corp.
IRG4RC10UPBF IRG4RC10UTRPBF IRG4RC10UPBF-15 INSULATED GATE BIPOLAR TRANSISTOR
Generation 4 IGBT design provides tighter parameter distribution and higher effciency than previous generation
   INSULATED GATE BIPOLAR TRANSISTOR
International Rectifier
IRG4BC30KD-S IRG4BC30KD-STRR IRG4BC30KDS IRG4BC30K 600V UltraFast 8-25 kHz Copack IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
IRF[International Rectifier]
MGP4N60E-D Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
ON Semiconductor
MGS13002DD MGS13002D Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
MOTOROLA[Motorola, Inc]
MGP7N60ED-D Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
ON Semiconductor
MGP11N60ED-D Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
ON Semiconductor
GT50J325 Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
TOSHIBA[Toshiba Semiconductor]
CM400HA-28H High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
HIGH POWER SWITCHING USE INSULATED TYPE
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
CM1200HA-50H High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
HIGH POWER SWITCHING USE INSULATED TYPE
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
IRGP4069PBF INSULATED GATE BIPOLAR TRANSISTOR
International Rectifier
 
 Related keyword From Full Text Search System
IRG7PH50K10DPBF Search IRG7PH50K10DPBF hot IRG7PH50K10DPBF cmos IRG7PH50K10DPBF Manufacturer IRG7PH50K10DPBF Rectifier
IRG7PH50K10DPBF band IRG7PH50K10DPBF Microcontroller IRG7PH50K10DPBF Chip IRG7PH50K10DPBF System IRG7PH50K10DPBF 资料
 

 

Price & Availability of IRG7PH50K10DPBF

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
1.6425440311432