| PART |
Description |
Maker |
| FDMC86340 |
80V N-Channel Shielded Gate Power TrenchMOSFET
|
Fairchild Semiconductor
|
| FDD86113LZ |
N-Channel Shielded Gate PowerTrench? MOSFET 100 V, 5.5 A, 104 mΩ
|
Fairchild Semiconductor
|
| FDMC008N08C |
N-Channel Shielded Gate PowerTrench MOSFET
|
ON Semiconductor
|
| MGP14N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGS13002D-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGW12N120-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGW20N120-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGW12N120D-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGS05N60D_D ON1885 MGS05N60D MGS05N60D-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
IGBT 0.5 A @ 25 600 V
From old datasheet system
|
ONSEMI[ON Semiconductor]
|
| 558-1192 558-1192-09-00-00 558-1192-11-00-00 558-1 |
Variable Coil, Shielded, Vertical, .080μH thru 1.20mΗ
SHIELDED, 1.8 uH - 2.7 uH, VARIABLE INDUCTOR
SHIELDED, 3.9 uH - 5.6 uH, VARIABLE INDUCTOR
SHIELDED, 0.39 uH - 0.56 uH, VARIABLE INDUCTOR
|
CAMBION Electronic Components
WEARNES CAMBION LTD
|
| UCC21540 UCC21540DW UCC21540DWK UCC21540DWKR UCC21 |
<font color=red>[Old version datasheet]</font> UCC21541 Reinforced Isolation Dual-Channel Gate Driver with 3.3mm Channel-to-Channel Spacing Option
|
TI store
|
