| PART |
Description |
Maker |
| SF10A01 SF10A02 SF10A04 SF10A03 SF10A05 SF10A06 |
Glass Passivated Super Fast Recovery Rectifie
|
YENYO TECHNOLOGY Co., Ltd
|
| BAV19 BAV21 BAV20 BAV19-TP |
500mW Small Signal Diodes 120 to 250 Volts
0.2 A, 120 V, SILICON, SIGNAL DIODE, DO-35
|
Micro Commercial Components
|
| GP02-17A |
High Voltage 1.0A Sintered Glass Passivated Rectifie
|
Olitech Electronics Co....
|
| GM76C256CW GM76C256CLLT-55W |
x8|2.7~5.5V|55/70/85/100/120|Low Power Slow SRAM - 256K x8 | 2.75.5V的| 55/70/85/100/120 |低功耗SRAM的速度 256K
32K X 8 STANDARD SRAM, 120 ns, PDSO28
|
TE Connectivity, Ltd.
HYNIX SEMICONDUCTOR INC
|
| HS12230R |
120 A, 30 V, SILICON, RECTIFIER DIODE
|
MICROSEMI CORP-SCOTTSDALE
|
| SPD165611R |
120 A, SILICON, RECTIFIER DIODE
|
SENSITRON SEMICONDUCTOR
|
| C9732DK-11-15 |
For soft X-ray imaging, cassette type with USB 2.0 interface Large photodiode area: 120 x 120 mm
|
Hamamatsu Corporation
|
| V20120S-E3/4W |
20 A, 120 V, SILICON, RECTIFIER DIODE, TO-220AB
|
VISHAY SEMICONDUCTORS
|
| CMPD7000EBK CMPD7000ETR |
0.2 A, 120 V, 2 ELEMENT, SILICON, SIGNAL DIODE
|
CENTRAL SEMICONDUCTOR CORP
|
| MJ11013 MJ11015 MJ11014 MJ11016 ON1974 MJ11012 |
30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.120 VOLTS 200 WATTS
From old datasheet system
30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60-120 VOLTS 200 WATTS
|
Motorola, Inc.
Motorola Inc
ONSEMI[ON Semiconductor]
|
| MJ11022 MJ11018 MJ11021 ON1975 MJ11017 |
30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.120 VOLTS 200 WATTS
From old datasheet system
30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60-120 VOLTS 200 WATTS
|
Motorola, Inc.
MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
|
| EH2745TS-120.000M |
OSCILLATORS 50PPM 0 70 2.5V 4 120.000MHZ TS CMOS 7.0X5.0 4PAD SMD CRYSTAL OSCILLATOR, CLOCK, 120 MHz, LVCMOS OUTPUT
|
Ecliptek, Corp.
|
