| PART |
Description |
Maker |
| 2SK3475 |
Field Effect Transistor Silicon N Channel MOS Type VHF- and UHF-band Amplifier Applications
VHF-and UHF-band Amplifier Applications
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| 2SC5544YZ-TR-E 2SC5544YZ-TL-E |
Silicon NPN Epitaxial VHF / UHF wide band amplifier
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR 1.40 X 0.80 MM, 0.59 MM HEIGHT, MODIFIED SC-89, MFPAK-3
|
Renesas Electronics Corporation
|
| 2SC5545ZS-TL-E |
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR LEAD FREE, SC-61AA, MPAK-4
Silicon NPN Epitaxial VHF / UHF wide band amplifier
|
Renesas Electronics Corporation
|
| MT6C04AS |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application
|
TOSHIBA
|
| D1009UK |
METAL GATE RF SILICON FET 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
TT electronics Semelab, Ltd.
Seme LAB
|
| BF246A BF246B BF246C BF247C BF247A BF247B |
N-channel silicon junction field-effect transistors UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| KV2101 KV2001 KV2501-15 KV2501-00 KV2801 KV2801-30 |
VARACTOR DIODES HF/VHF/UHF Hyperabrupt Junction
UHF BAND, 50 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
UHF BAND, 200 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
UHF BAND, 155 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
Microsemi Corporation
MICROSEMI CORP-LOWELL
|
| TR2M-458-10 TR2M-458-5 TR2M-433-5 TR2I-433-5 TR2I- |
Narrow Band FM Multi-channel UHF Transceiver
|
Radiometrix Ltd
ETC
List of Unclassifed Manufacturers
|
| GN1043 GN1043P |
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MESFET
|
PANASONIC CORP
|
| PN4416-TO-72 |
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-72
|
MICROSS COMPONENTS
|
| SMP4416 |
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236
|
|
