PART |
Description |
Maker |
SI8822 |
VDS (V) = 20V ID = 7A (VGS=10V) Drain-Source Voltage VDS 20 V
|
TY Semiconductor Co., L...
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PT7A7515 PT7A7513 PT7A7535 PT7A7531 |
MOSFET; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:67A; On-Resistance, Rds(on):7.9mohm; Rds(on) Test Voltage, Vgs:10V; Leaded Process Compatible:No; Package/Case:D2PAK; Peak Reflow Compatible (260 C):No RoHS Compliant: No 3.08V Reset Active Low Supervisor 20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
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2N5484 2N5485 2N5486 SST5484 SST5485 SST5486 |
High Frequency/General Purpose N-Channel JFETs MOSFET, P SO-8MOSFET, P SO-8; Transistor type:MOSFET; Transistor polarity:P; Voltage, Vds max:20V; Case style:SO-8; Current, Id cont:4.5A; Current, Idm pulse:-20A; Power, Pd:1.3W; Resistance, Rds on:0.04R; SMD:1; Charge, gate p MOSFET, P SO-8MOSFET, P SO-8; Transistor type:MOSFET; Transistor polarity:P; Voltage, Vds max:20V; Case style:SO-8; Current, Id cont:5.6A; Current, Idm pulse:-30A; Power, Pd:1.25W; Resistance, Rds on:0.025R; SMD:1; Charge, gate p
|
Vishay Siliconix Vishay Intertechnology,Inc.
|
KI5903DC |
Drain-Source Voltage Vds -20V Gate-Source Voltage Vgs -12V
|
TY Semiconductor Co., Ltd
|
KI4920DY |
Drain-Source Voltage Vds 30V Gate-Source Voltage Vgs -20V
|
TY Semiconductor Co., Ltd
|
2SD2150 2SC4115S 2SD2264 A5800368 2SD2150R |
Low Frequency Transistor(20V/ 3A) TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 3A I(C) | SC-62 From old datasheet system Low Frequency Transistor (20V, 3A) Low Frequency Transistor(20V, 3A) Transistors > Small Signal Bipolar Transistors(up to 0.6W)
|
Rohm
|
NJU26106 |
ProLogicII / VDS / BM / Noise Generator / QFP32-R1
|
JRC
|
2SC4836 2SC4836F |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 5A I(C) | SIP 晶体管|晶体管|叩| 20V的五(巴西)总裁| 5A条一(c)|园区 20V/5A Switch Applications
|
STMicroelectronics N.V. SANYO[Sanyo Semicon Device]
|
CDBK0520L |
Small Signal Schottky Diodes, V-RRM=20V, V-R=20V, I-O=500mA SMD Schottky Barrier Diode
|
Comchip Technology
|
STT358512 |
3.5A, 20V, RDS(ON) 75m -2.5A, -20V, RDS(ON) 160m N And P-Channel Enhancement Mode Power MOSFET
|
SeCoS Halbleitertechnologie GmbH
|
IRSF3010 |
FULLY PROTECTED POWER MOSFET SWITCH(Vds=50V, Rds(on)=80mohm)
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IRF[International Rectifier]
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