| PART |
Description |
Maker |
| CRA2010-FZ-R005ELF CRA2510-FZ-R005ELF CRA2510-FZ-R |
CRA2010/CRA2512 - High Power Current Sense Chip Resistor
|
Bourns Electronic Solutions
|
| TDA4863-2 TDA4863-2G Q67040-S4620 Q67040-S4621 |
Power Control ICs - PFC-IC for high Output Power in SMD-Package
Power Factor Controller IC for High Power Factor and Low THD
|
INFINEON[Infineon Technologies AG]
|
| WSLT4026-15 |
Power Metal Strip? Resistors, High Temperature (275 °C),High Power, Low Value, Surface Mount, 4-Terminal
|
Vishay Siliconix
|
| MJW16206 ON2059 |
POWER TRANSISTORS 12 A, 500 V, NPN, Si, POWER TRANSISTOR, TO-247AE
High and Very High Resolution CRT Monitors
From old datasheet system
|
ON Semiconductor
|
| AWT6106 |
The AWT6106 is a 3.5V (3.0V to 4.2V) high power, high efficiency, three stage power amplifier module for Dual Mode CDMA/PCS wireless ...
|
Anadigics Inc
|
| BUX81 |
HIGH CURRENT HIGH SPEED HIGH POWER SILICON NPN PLANAR TRANSISTOR
|
Seme LAB
|
| MT5375-UV |
Dimension in mm High power, high-speed, narrow beam angle, high reliablitiy
|
Marktech Corporate
|
| MT5355-UV |
Dimension in mm High power, high-speed, narrow beam angle, high reliablitiy
|
Marktech Corporate
|
| AUIRS2112S |
The AUIRS2112S is a high voltage, high speed power MOSFET and IGBT driver with independent high- and lowside referenced output channels.
|
International Rectifier
|
| IRS26072DSPBF |
The IRS26072D is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels.
|
International Rectifier
|
| TA0012 |
New High Power, High Efficiency HBT GSM Power Amplifier
|
RFMD[RF Micro Devices]
|
