| PART |
Description |
Maker |
| MP2B5038 MP2B5085 MP2B5052 MP2B5150 |
A multi chip power device for a Multi-Oscillated Current Resonant type Converter
|
Fuji Electric
|
| M39P0R9070E2 M39P0R9070E2ZADE M39P0R9070E2ZADF |
256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package
|
Numonyx B.V
|
| M36L0T7050B2 M36L0T7050B2ZAQ M36L0T7050B2ZAQE M36L |
128 Mbit (Multiple Bank, Multi-Level, Burst) Flash memory and 32 Mbit (2Mb x16) PSRAM, Multi-Chip Package
|
Numonyx B.V
|
| PS2532L-2-V-E4-A PS2532L-1-F3-A PS2532L-1-V-E3-A P |
HIGH COLLECTOR TO EMITTER VOLTATGE HIGH ISOLATION VOLTAGE MULTI PHOTOCOUPLER SERIES 高集电极到发射极VOLTATGE高隔离电压多功能光电耦合器系
|
California Eastern Laboratories, Inc.
|
| CE201210-2N2D CE201210-1N8D CE201210-1N5D CE201210 |
Multi-Layer Chip Inductors
MAGNETICS MULTILAYER CHIP INDUCTOR
|
Bourns Electronic Solutions
Bourns, Inc.
|
| SIDC07D60AF6 SIDC07D60AF610 |
Fast switching diode 600V Emitter Controlled technology 70 μm chip
|
Infineon Technologies AG
|
| M36LLR8760B1 M36LLR8760M1 M36LLR8760TT M36LLR8760D |
256 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package
|
意法半导
STMicroelectronics
ST Microelectronics
|
| M36P0R9060N0ZANE M36P0R9060N0ZANF M36P0R9060N0 |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Mux I/O, Multi-Chip Package
|
Numonyx B.V
|
| S71WS512ND0BAWAN3 S71WS512ND0BAWAP0 S71WS256ND0BAW |
Stacked Multi-Chip Product (MCP)
Stacked Multi-Chip Product (MCP) SPECIALTY MEMORY CIRCUIT, PBGA84
|
http://
SPANSION[SPANSION]
Spansion, Inc.
|
| PS2703-1-F3-A PS2703-1-F3-K-A PS2703-1-F3-L-A PS27 |
HIGH ISOLATION VOLTAGE HIGH COLLECTOR TO EMITTER VOLTAGE TYPE SOP MULTI PHOTOCOUPLER
|
Duracell
California Eastern Labs
|
