| PART |
Description |
Maker |
| IRFB4321GPBF |
HEXFETPower MOSFET
|
International Rectifier
|
| IRF540PBF |
HEXFETPower MOSFET
|
International Rectifier
|
| IRFB4310ZGPBF |
HEXFETPower MOSFET
|
International Rectifier
|
| IRF7452QPBF10 |
HEXFETPower MOSFET
|
International Rectifier
|
| IRF7342PBF |
HEXFETPower MOSFET (VDSS = -55V , RDS(on) = 0.105 ㈢的HEXFET功率MOSFET（减振钢板基本\u003d - 55V的，的RDS（on）\u003d 0.105ヘ）
|
International Rectifier, Corp.
|
| IRFZ44ZLPBF |
HEXFETPower MOSFET ( VDSS = 55V , RDS(on) = 13.9m, ID = 51A ) ㈢的HEXFET功率MOSFET（减振钢板基本\u003d 55V的，的RDS（on）\u003d十三点九米ヘ，身份证\u003d 51A条）
|
International Rectifier, Corp.
|
| VMO550-01F |
HiPerFET MOSFET Module 590 A, 100 V, 0.0021 ohm, N-CHANNEL, Si, POWER, MOSFET
MOSFET Modules
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| SCH2815 |
MOSFET : N-Channel Silicon MOSFET MOSFET General-Purpose Switching Device
|
Sanyo Semicon Device
|
| SI4410DYPBF SI4410DYTRPBF |
N-Channel MOSFET
10 A, 30 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA LEAD FREE, SO-8
HEXFET㈢Power MOSFET
HEXFET?Power MOSFET
|
Hypertronics, Corp.
International Rectifier
|
| VRF148A VRF148AMP VRF148A10 |
RF MOSFET (VDMOS) for 50V operation; P(out) (W): 30; P(in) (W): 1; Gain (dB): 15; VDD (V): 50; Coss (pF): 35; Case Style: M113 VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
RF POWER VERTICAL MOSFET
|
Microsemi, Corp.
Microsemi Corporation
|
|
