| PART |
Description |
Maker |
| IRGP430U |
Insulated Gate Bipolar Transistors (IGBTs)(超快速绝缘栅型双极型晶体 绝缘门双极晶体管（IGBTs）（超快速绝缘栅型双极型晶体管）
500V Discrete IGBT in a TO-3P (TO-247AC) package
|
International Rectifier, Corp.
|
| GT40QR21 |
Discrete IGBTs Silicon N-Channel IGBT
|
Toshiba Semiconductor
|
| SG50N06T SG50N06DT |
Discrete IGBTs
|
Sirectifier Global Corp.
Sirectifier Semiconductors
ETC[ETC]
List of Unclassifed Manufacturers
|
| SG15N12DP SG15N12P |
Discrete IGBTs
|
Sirectifier Global Corp.
Sirectifier Semiconductors
|
| SG75S12S |
Discrete IGBTs
|
Sirectifier Global Corp.
|
| SG12N06DP SG12N06P |
Discrete IGBTs
|
Sirectifier Semiconductors
Sirectifier Global Corp.
|
| IRGPC50M |
Insulated Gate Bipolar Transistors (IGBTs)(??矾棰??瓒?揩???缂?????????朵?绠?
600V Discrete IGBT in a TO-3P (TO-247AC) package
|
International Rectifier
|
| 30BF..SERIES 30BF80 30BF10 30BF20 30BF40 30BF60 30 |
DIODE 3 A, SILICON, RECTIFIER DIODE, DO-214AB, Rectifier Diode
SURFACE MOUNTABLE ULTRAFAST RECOVERY DIODE 表面贴装超快恢复二极
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
800V 3A Ultra-Fast Discrete Diode in a SMC package
400V 3A Ultra-Fast Discrete Diode in a SMC package
600V 3A Ultra-Fast Discrete Diode in a SMC package
100V 3A Ultra-Fast Discrete Diode in a SMC package
200V 3A Ultra-Fast Discrete Diode in a SMC package
|
International Rectifier, Corp.
IRF[International Rectifier]
VISHAY SEMICONDUCTORS
|
| 2SJ221 |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0611-3 05; No. of Positions: 8; Connector Type
Silicon P-Channel MOS FET
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| 2SJ220 2SJ220L 2SJ220S |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0519-0 01; No. of Positions: 8; Connector Type: Board
SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING
|
Hitachi,Ltd.
Hitachi Semiconductor
|
| 2SH27 |
IGBTs
Silicon N Channel IGBT High Speed Power Switching
|
Hitachi Semiconductor
Hitachi,Ltd.
|
