PART |
Description |
Maker |
71P74604S167BQG8 P74804S200BQ8 |
512K X 36 QDR SRAM, 0.5 ns, PBGA165 13 X 15 MM, 1 MM PITCH, GREEN, FBGA-165 1M X 18 QDR SRAM, 0.45 ns, PBGA165
|
Integrated Device Technology, Inc. INTEGRATED DEVICE TECHNOLOGY INC
|
CY7C1310CV18-167BZXC CY7C1314CV18-167BZI CY7C1314C |
18-Mbit QDR-IISRAM 2-Word Burst Architecture 2M X 8 QDR SRAM, 0.5 ns, PBGA165 18-Mbit QDR-IISRAM 2-Word Burst Architecture 512K X 36 QDR SRAM, 0.5 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
CY7C1415BV18-250BZI CY7C1415BV18-167BZI |
36-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V 1M X 36 QDR SRAM, 0.45 ns, PBGA165 36-Mbit QDR™-II SRAM 4-Word Burst Architecture
|
Cypress Semiconductor, Corp. CYPRESS SEMICONDUCTOR CORP
|
CY7C1510AV18-200BZC CY7C1510AV18-200BZI CY7C1510AV |
72-Mbit QDR-IISRAM 2-Word Burst Architecture 8M X 9 QDR SRAM, 0.45 ns, PBGA165 72-Mbit QDR-IISRAM 2-Word Burst Architecture 2M X 36 QDR SRAM, 0.45 ns, PBGA165 72-Mbit QDR-IISRAM 2-Word Burst Architecture 4M X 18 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
K7Q161854A-FC16 K7Q163654A-FC20 K7Q161854A-FC20 K7 |
1M X 18 QDR SRAM, 3 ns, PBGA165 512Kx36-bit, 1Mx18-bit QDR SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
|
CY7C1565V18-300BZI |
72-Mbit QDRII SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 2M X 36 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
GS81302DT19GE-333I |
8M X 18 QDR SRAM, 0.45 ns, PBGA165
|
GSI TECHNOLOGY
|
CY7C1510V18-278BZC CY7C1510V18-278BZI CY7C1510V18- |
72-Mbit QDR-IISRAM 2-Word Burst Architecture 8M X 9 QDR SRAM, 0.45 ns, PBGA165 72-Mbit QDR-IISRAM 2-Word Burst Architecture 8M X 9 QDR SRAM, PBGA165 72-Mbit QDR-IISRAM 2-Word Burst Architecture 4M X 18 QDR SRAM, PBGA165 72-Mbit QDR-IISRAM 2-Word Burst Architecture 2M X 36 QDR SRAM, 0.45 ns, PBGA165 72-Mbit QDR-IISRAM 2-Word Burst Architecture 4M X 18 QDR SRAM, 0.45 ns, PBGA165 72-Mbit QDR-II??SRAM 2-Word Burst Architecture
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
CY7C1312BV18-167BZXC CY7C1310BV18-167BZXC CY7C1314 |
18-Mbit QDR-II SRAM 2-Word Burst Architecture 1M X 18 QDR SRAM, 0.5 ns, PBGA165 18-Mbit QDR-II(TM) SRAM 2-Word Burst Architecture
|
Cypress Semiconductor, Corp. Cypress Semiconductor Corp.
|
CY7C1410V18 CY7C1410V18-167BZC CY7C1410V18-200BZC |
4M X 8 QDR SRAM, 0.45 ns, PBGA165 36-Mbit QDR-II SRAM 2-Word Burst Architecture 36-Mbit QDR-II?/a> SRAM 2-Word Burst Architecture 36-Mbit QDR-II?SRAM 2-Word Burst Architecture
|
CYPRESS SEMICONDUCTOR CORP
|
IDT71P74104S167BQ IDT71P74104S200BQ IDT71P74104S25 |
1.8V 512K x 36 QDR II PipeLined SRAM 1.8V 2M x 9 QDR II PipeLined SRAM 1.8V 1M x 18 QDR II PipeLined SRAM 1.8V 2M x 8 QDR II Pipelined SRAM 18Mb Pipelined QDR II SRAM Burst of 4
|
IDT http://
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