| PART |
Description |
Maker |
| CMLT7410G CMLT7410TR |
1000 mA, 25 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
|
CENTRAL SEMICONDUCTOR CORP
|
| APT14F100S APT14F100B09 |
Power FREDFET; Package: D3 [S]; ID (A): 14; RDS(on) (Ohms): 0.98; BVDSS (V): 1000; 14 A, 1000 V, 0.98 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel FREDFET
14 A, 1000 V, 0.98 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
Microsemi, Corp.
Microsemi Corporation
MICROSEMI POWER PRODUCTS GROUP
|
| 2SB798 2SB798-T2 2SB798-T1 2SB794L 2SB798DK-AZ 2SB |
1000 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR MINIMOLD PACKAGE-3
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1.5A I(C) | TO-126
PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
Silicon transistor
|
IRC Advanced Film
NEC[NEC]
|
| APT10090SLL APT10090BLL APT10090BLL_03 APT10090BLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
12 A, 1000 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD TO-247, 3 PIN
12 A, 1000 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET D3PAK-3
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
|
| APT10078SLL APT10078BLL APT10078BLL_04 APT10078BLL |
14 A, 1000 V, 0.78 ohm, N-CHANNEL, Si, POWER, MOSFET D3PAK-3
14 A, 1000 V, 0.78 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD TO-247, 3 PIN
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| IXGM25N100A IXGP12N100 |
Low VCE(sat), High speed IGBT 50 A, 1000 V, N-CHANNEL IGBT, TO-204AE
IGBT 20 A, 1000 V, N-CHANNEL IGBT, TO-220AB
|
IXYS, Corp.
|
| 2SA1615-Z-T1K FP1A4M-T1B FP1J3P-T1B FP1L3N-T1B 2SK |
10000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR PLASTIC, MP-3, SC-63, 3 PIN
700 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR PLASTIC, SC-59, 3 PIN
30 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET
100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
1000 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
Welwyn Components, Ltd.
Sumida, Corp.
|
| MTY14N100E_D ON2710 MTY14N100E MTY14N100 MTY14N100 |
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM TMOS14安培，功率场效应晶体000伏特的RDS（on）\u003d 0.80欧姆
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM 14 A, 1000 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
From old datasheet system
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| 2SC1740SLNTP/S 2SA933ASLNTP/RS 2SA933ALNT93/RS 2SC |
150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
3000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
50 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
1000 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
500 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR
50 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
1000 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR
50 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
5000 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
Lattice Semiconductor, Corp.
MERITEK Electronics, Corp.
|
| 2SB1115A-T1 |
1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
|
| BCX53-10 |
1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
DIODES INC
|
|
