| PART |
Description |
Maker |
| 2SD1816S-TL-E 2SD1816S-H 2SD1816S-E 2SD1816S-TL-H |
Bipolar Transistor
Bipolar Transistor (-)100V, (-)4A, Low VCE(sat), (PNP)NPN Single TP/TP-FA
|
ON Semiconductor
|
| EN3096A 2SC4489T-AN |
Bipolar Transistor
Bipolar Transistor High breakdown voltage, large current capacity
|
ON Semiconductor
|
| STRS6703 STRS6704 STR-S6703 STR-S6704 |
Off-Line Switching Regulator With Bipolar Switching Transistor(峰值输出电2A，输出功率直40W00V输出，带双极开关晶体管的脱线开关稳压器)
(STRS6703 / STRS6704) OFF-LINE SWITCHING REGULATORS WITH BIPOLAR SWITCHING TRANSISTOR
OFF-LINE SWITCHING REGULATORS WITH BIPOLAR SWITCHING TRANSISTOR
|
Allegro MicroSystems, Inc.
|
| CZT122 CZT127 |
SMD Bipolar Power Transistor PNP Darlington
SMD Bipolar Power Transistor NPN Darlington
SURFACE MOUNT COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR
|
Central Semiconductor Corp
|
| IRG4PH40K |
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.74V, @Vge=15V, Ic=15A)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
|
IRF[International Rectifier]
|
| CZT3055 CZT3055NPN CZT2955PNP CZT2955 CZT305 |
SMD Bipolar Power Transistor NPN General Purpose Amplifier/Switch
SMD Bipolar Power Transistor PNP General Purpose Amplifier/Switch
2.0W SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTOR
|
CENTRAL[Central Semiconductor Corp]
|
| 2N1021A 2N457A 2N1166 2N1022A 2N1552 2N1554 |
germanium power transistors
Bipolar Junction Transistor
SILICON PNP TRANSISTOR
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semiconductors
New Jersey Semi-Conductor P...
New Jersey Semi-Conduct...
|
| EMX28 |
Low frequency transistor, complex (2-elements) Bipolar Transistor
|
ROHM[Rohm]
|
| PHI617-30 PH1617-30 |
Wireless Bipolar Power Transistor/ 30W 1.6 - 1.7 GHz
Wireless Bipolar Power Transistor, 30W 1.6-1.7 GHz
CONNECTOR ACCESSORY 连接器附
|
Tyco Electronics
Electronic Theatre Controls, Inc.
PCA Electronics, Inc.
|
| IRGB4064DPBF |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
|
IRF[International Rectifier]
|
| STC04IE170HV |
Emitter switched bipolar transistor ESBT? 1700V - 4A - 0.17 W
Emitter switched bipolar transistor ESBT㈢ 1700V - 4A - 0.17 W
|
STMicroelectronics
|
