PART |
Description |
Maker |
STP45NF3LL_06 B11NM60FD P11NM60FD STB11NM60FD STB1 |
N-channel 30V - 0.014ohm - 45A TO-220 - TO-220FP - D2PAK STripFET II power MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
RJK0452DPB13 RJK0452DPB-00-J5 |
40V, 45A, 3.5m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
FMC6G10US60 |
IGBT Compact & Complex Module Sweep Function Generator; Bandwidth Max:20MHz; Frequency Max:20MHz; Frequency Min:0.1Hz; Waveforms:27 Built-in RoHS Compliant: NA
|
Fairchild Semiconductor Corporation
|
IRF7831PBF IRF7831TRPBF IRF7831PBF-15 |
Ultra-Low Gate Impedance HEXFET Power MOSFET ( VDSS = 30V , RDS(on)max = 3.6mΩ@VGS = 10V , Qg(typ.) = 40nC ) HEXFET Power MOSFET ( VDSS = 30V , RDS(on)max = 3.6mヘ@VGS = 10V , Qg(typ.) = 40nC ) High Frequency Point-of-Load Synchronous Buck Converter
|
International Rectifier
|
FMC7G50US60 |
IGBT Compact & Complex Module Function Generator; Bandwidth Max:40MHz; Amplitude Accuracy :0.01dB; Frequency Max:40MHz; Frequency Min:0.1Hz; Waveforms:27 Built-in RoHS Compliant: NA
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation
|
IRFU3707 IRFR3707 IRFR3707PBF IRFR3707TRR IRFU3707 |
30V Single N-Channel HEXFET Power MOSFET in a I-Pak package 30V Single N-Channel HEXFET Power MOSFET in a D-Pak package Power MOSFET(Vdss=30V, Rds(on)max=13mohm, Id=61A?) Power MOSFET(Vdss=30V, Rds(on)max=13mohm, Id=61A) Power MOSFET(Vdss=30V, Rds(on)max=13mohm, Id=61A?
|
IRF[International Rectifier]
|
DTD743EE DTD743EM |
200mA / 30V Low VCE (sat) Digital transistors (with built-in resistors)
|
Rohm
|
DTB713ZM DTB713ZE |
-200mA / -30V Low VCE (sat) Digital transistors (with built-in resistors)
|
http:// ROHM[Rohm]
|
DTD723YM DTD723YE |
200mA / 30V Low VCE (sat) Digital transistors(with built-in resistors)
|
Rohm
|
DTB713ZE09 |
-200mA / -30V Low VCE (sat) Digital transistors (with built-in resistors)
|
Rohm
|
DTD743XE11 DTD743XM |
200mA / 30V Low VCE (sat) Digital transistors(with built-in resistors)
|
Rohm
|
IRLU7833PBF IRLR7833PBF |
HEXFET Power MOSFET ( VDSS = 30V , RDS(on)max = 4.5mΩ , Qg = 33nC ) HEXFET Power MOSFET ( VDSS = 30V , RDS(on)max = 4.5mヘ , Qg = 33nC )
|
International Rectifier
|