| PART |
Description |
Maker |
| BH6627FS |
Magnetic Disk LSIs > FDD read/write amplifier
Read /Write amplifier for FDD
Read / Write Amplifier for FDD(FDD的读/写放大器)
|
ROHM[Rohm]
Rohm CO.,LTD.
|
| IDT70825L20G IDT70825L35G IDT70825L45G IDT70825S45 |
HIGH-SPEED 8K x 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM?
Cabinet Rack Front Panel RoHS Compliant: Yes 8K X 16 STANDARD SRAM, 20 ns, PQFP80
HIGH-SPEED 8K x 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM 8K X 16 STANDARD SRAM, 45 ns, CPGA84
HIGH-SPEED 8K x 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM 8K X 16 STANDARD SRAM, 35 ns, PQFP80
HIGH-SPEED 8K x 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM 8K X 16 STANDARD SRAM, 45 ns, PQFP80
HIGH-SPEED 8K x 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM 8K X 16 STANDARD SRAM, 20 ns, CPGA84
HIGH-SPEED 8K x 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM)
|
SRAM
Integrated Device Technology, Inc.
|
| XR-511R-4D XR-511-6CP XR-511-6CJ XR-511-6D XR-511R |
4-Channel Disk/Tape Read/Write Circuit
8-Channel Disk Read/Write Circuit 8通道磁盘写电
6-Channel Read/Write Circuit 6通道写电
|
Linear Technology, Corp.
|
| AT49LV2048A AT49BV2048A AT49LV2048A-70TC AT49LV204 |
2M bit, 3.0-Volt Read and 3.0-Volt Write, Byte-Write Flash, Bottom Boot
2M bit, 2.7-Volt Read and 2.7-Volt Write, Byte-Write Flash, Bottom Boot
2-megabit (256K x 8/128K x 16) Single 2.7-volt Battery-Voltage Flash Memory
|
Atmel
|
| VM710625CSSJ VM710820CPOJ VTCINC-VM710820POJ VM710 |
6 CHANNEL READ WRITE AMPLIFIER CIRCUIT, PDSO24
8 CHANNEL READ WRITE AMPLIFIER CIRCUIT, PDSO36
2 CHANNEL READ WRITE AMPLIFIER CIRCUIT, PDSO16
|
VTC INC
|
| MCM6249 MCM6249WJ2 MCM6249WJ3 MCM6249WJ35R2 MCM624 |
1M X 4 bit static random access memory
1M x4 Bit Static Random Access Memory
CRYSTALS 30/50 0 70 20PF 20.000MHZ ATCUT FUND HC-49/UP
|
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
|
| SSI32R2300-4CL SSI32R2300-4CV SSI32R2300R-2CL SSI3 |
4-Channel Disk/Tape Read/Write Circuit 4通道的磁磁带写电
2-Channel Disk Read/Write Circuit 2通道磁盘写电
|
HIROSE ELECTRIC Co., Ltd.
|
| EM4095 EM4095HMSO16A |
Read / Write Analog Front End
Read/Write analog front end for 125kHz RFID Basestation
|
EM Microelectronic - MARIN SA
ETC
|
| VM710415SSL VM710410POL VM710210POL VM710425IVSL V |
4-Channel Disk/Tape Read/Write Circuit
2-Channel Disk Read/Write Circuit 2通道磁盘写电
|
STMicroelectronics N.V.
|
| SSI32R2210X-4CL SSI32R2210X-4CV SSI32R2210W-4CV SS |
2-Channel Disk Read/Write Circuit
4-Channel Disk/Tape Read/Write Circuit 4通道的磁磁带写电
|
Ecliptek, Corp.
Linear Technology, Corp.
|
| MCM6227A MCM6227AWJ20 MCM6227AWJ20R2 MCM6227AWJ25 |
1M x 1 Bit Static Random Access Memory 100万1位静态随机存取存储器
1M x 1 Bit Static Random Access Memory 1M X 1 STANDARD SRAM, 35 ns, PDSO28
1M x 1 Bit Static Random Access Memory 1M X 1 STANDARD SRAM, 45 ns, PDSO28
|
Motorola Mobility Holdings, Inc.
Motorola, Inc
MOTOROLA[Motorola Inc]
|
