PART |
Description |
Maker |
2SC2881 |
Voltage Amplifier Applications High Voltage : VCEO = 120V High Transition Frequency : fT = 120MHz(typ.)
|
TY Semicondutor TY Semiconductor Co., Ltd
|
2SC3632-Z |
High voltage VCEO=600V High speed tf 0.5ìs Collector to base voltage VCBO 600 V
|
TY Semiconductor Co., Ltd
|
2SC5211 |
High voltage VCEO=50V. Small package for mounting.Collector-base voltage VCBO 55 V
|
TY Semiconductor Co., Ltd
|
2SC3360 |
High DC current gain.hFE=90 to 450 High voltage VCEO=200V
|
TY Semiconductor Co., Ltd
|
2SA1201 |
High Voltage : VCEO = -120V High Transition Frequency : fT = 120MHz(typ.)
|
TY Semiconductor Co., Ltd
|
AME385-25 AME385BEAS AME385BEAT AME385DEHA AME385B |
Micropower Voltage Reference Diode 微功耗电压基准二极管 OPTOISO W/O BASE HIGH VCEO 6-DIP
|
AME, Inc. AME[Analog Microelectronics]
|
2SB800 |
World standard miniature package:SOT-89 High collector to emitter voltage:VCEO -80V
|
TY Semiconductor Co., Ltd
|
SMLA42CSM |
SILICON NPN HIGH VOLTAGE TRANSISTOR IN CERAMIC SURFACE MOUNT PACKAGE Silicon NPN High Voltage Transistor In Ceramic Surface Mount (Vcbo:300V,Vceo:300V,Vebo:6V)(N沟道增强高电压功率MOS场效应管(Vcbo:300V,Vceo:300V,Vebo:6V)) 高压硅npn型晶体管在陶瓷表面贴装(Vcbo00V,Vceo00V,Vebo6V的)(不适用沟道增强型,高电压功率马鞍山场效应管(Vcbo00V,Vceo00V,Vebo6V的)
|
SemeLAB SEME-LAB[Seme LAB] Motorola Mobility Holdings, Inc.
|
BF422BPL |
0.900W High Voltage NPN Plastic Leaded Transistor. 250V Vceo, 0.500A Ic, 60 - 120 hFE.
|
Continental Device India Limited
|
2N6515 |
High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW.
|
USHA India LTD
|