| PART |
Description |
Maker |
| TPC8405 |
Field Effect Transistor Silicon N, P Channel MOS Type (P Channel U−MOS IV/N Channel U-MOS III)
|
Toshiba Semiconductor
|
| TPCP8402 |
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
|
TOSHIBA[Toshiba Semiconductor]
|
| KU047N08P KU047N08P-15 |
N-ch Trench MOS FET
|
KEC(Korea Electronics)
|
| KUS220N10D |
N-ch Trench MOS FET
|
KEC(Korea Electronics)
|
| KU035N06P |
N-ch Trench MOS FET
|
KEC
|
| KUS035N06F |
N-ch Trench MOS FET
|
KEC(Korea Electronics)
|
| BSS192 |
P-channel vertical D-MOS intermediate level FET P沟道垂直 D-MOS 中间级场效应
N-channel TrenchMOS TM transistor
|
NXP Semiconductors N.V.
Philips
|
| 2SK3577 2SK3577-T1B 2SK3577-T2B |
N Channel enhancement MOS FET
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
|
NEC[NEC]
|
| VSSA3L6S-M3 |
Trench MOS Schottky technology
|
Vishay Siliconix
|
| VT60L45PW |
Trench MOS Schottky technology
|
Vishay Siliconix
|
| V10P6HM3 V10P6-M3 |
Trench MOS Schottky technology
|
Vishay Siliconix
|
