| PART |
Description |
Maker |
| HYS72V128321GR-7-D HYS72V128321GR-7.5-D HYS72V1283 |
1GB PC133 (2-2-2) 2-bank available 2Q02
512MB PC133 (3-3-3) 1-bank
POT 100 OHM 3/8 SQ CERM SL ST
2GB PC133 (3-3-3) 2-bank available 4Q02
256MB PC133 (3-3-3) 1-bank End-of-Life
512MB PC100 (2-2-2) 1-bank End-of-Life
1GB PC133 (3-3-3) 2-bank End-of-Life
2GB PC133 (2-2-2) 2-bank available 4Q02
PC133 Registered SDRAM-Modules PC133的SDRAM的注册模
1GB PC133 (3-3-3) 1-bank available tbd GB的PC133的（3-3-3银行提供待定
16M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
|
Infineon Technologies AG
Infineon Technologies A...
|
| HYS72D32500GR-8-A HYS72D64500GR-8-A HYS72D64500GR- |
256MB (32Mx72) PC1600 1-bank
512MB (64Mx72) PC1600 1-bank
512MB (64Mx72) PC2100 1-bank
1GB (128Mx72) PC1600 2-bank
1GB (128Mx72) PC2100 2-bank GB的（128Mx72）PC2100 2银行
32M X 72 DDR DRAM MODULE, 0.8 ns, DMA184
|
Infineon Technologies AG
|
| HYS72D32000GU-7-A HYS64D32000GU-7-A HYS72D64020GU- |
256MB (32Mx64) PC2100 1-bank
512MB (64Mx72) PC2100 2-bank
512MB (64Mx64) PC2100 2-bank
512MB (64Mx72) PC1600 2-bank
256MB (32Mx72) PC1600 1-bank End-of-Life
512MB (64Mx64) PC1600 2-bank 12MB的（64Mx64）PC1600 2银行
256MB (32Mx72) PC2100 1-bank 56MB的（32Mx72）PC2100 1银行
|
Infineon Technologies AG
|
| HYS72D64320GBR-7-B HYS72D32300GBR-7-B HYS72D64300G |
DDR SDRAM Modules - 512 MB (64Mx72) PC2700; 2-bank
DDR SDRAM Modules - 256MB (32Mx72) PC2100 1-bank, FBGA based
DDR SDRAM Modules - 512MB (64Mx72) PC2100 1-bank, FBGA based
DDR SDRAM Modules - 1GB (128Mx72) PC2100 2-bank, FBGA based
DDR SDRAM Modules - 512MB (64Mx72) PC3200 1-bank, FBGA based
DDR SDRAM Modules - 512MB (64Mx72) PC2700 1-bank, FBGA based
DDR SDRAM Modules - 512MB (64Mx72) PC3200 2-bank
DDR SDRAM Modules - 512MB (64Mx72) PC2700 2-bank available 2Q/04
DDR SDRAM Modules - 256MB (32Mx72) PC3200 1-bank, FBGA based
DDR SDRAM Modules - 1GB (128Mx72) PC2700 2-bank, FBGA based
DDR SDRAM Modules - 256MB (32Mx72) PC2700 1-bank, FBGA based
|
Infineon
|
| WED7P128ATA7003I25 WED7PXXXATA70XXI25 WED7P128ATA7 |
128MB to 1GB Industrial ATA Flash
|
WEDC[White Electronic Designs Corporation]
|
| HYS64D64020GBDL-5-C |
128MB-1GB, 200pin Small outlines for Laptop
|
Infineon
|
| KBE00F005A-D411 KBE00F005A |
512Mb NAND*2 256Mb Mobile SDRAM*2
|
SAMSUNG[Samsung semiconductor]
|
| KBE00G003M-D411 KBE00G003M |
NAND 512Mb*2 Mobile SDRAM 256Mb*2
|
SAMSUNG[Samsung semiconductor]
|
| MT8VDDT3264AG-40BC4 |
256MB, 512MB (x64, SR) 184-Pin DDR SDRAM UDIMM
|
Micron Technology
|
| HYS72D16500GR-7-A HYS72D32501GR-8-A |
256MB (32Mx72) PC1600 1-bank
DDR SDRAM Modules - 128MB (16Mx72) PC2100 1-bank
|
Infineon
|
| K4S281632D K4S281632D-L1H K4S281632D-L1L K4S281632 |
128Mb SDRAM, 3.3V, LVTTL, 133MHz
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL
RF CONNECTOR; 1.6/5.6 PLUG, CRIMP ATTACHMENT FOR RG179 & RG187
; Current Rating:30mA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No
128Mb SDRAM, 3.3V, LVTTL, 166MHz
128Mb SDRAM, 3.3V, LVTTL, 183MHz
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
