| PART |
Description |
Maker |
| MBR0540W |
Low forward voltage drop, Guard ring construction forTransient protection
|
TY Semiconductor Co., L...
|
| BAT54AW BAT54SW BAT54CW |
Low forward voltage Guard ring protected Very small SMD package.
|
TY Semiconductor Co., Ltd
|
| BAT64-07 BAT6407 Q62702-A964 |
Silicon Schottky Diodes (For low-loss/ fast-recovery/ meter protection/ bias isolation and clamping applications Integrated diffused guard ring)
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| FS1UM-18A |
Standard Recovery Rectifier; Forward Current:15A; Forward Current Average:9.5A; Forward Current Avg Rectified, IF(AV):9.5A; Forward Surge Current Max, Ifsm:225A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| FS1UM-16A |
Standard Recovery Rectifier; Forward Current:15A; Forward Current Average:9.5A; Forward Current Avg Rectified, IF(AV):9.5A; Forward Surge Current Max, Ifsm:225A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Powerex Power Semiconductors
Mitsubishi Electric Corporation
|
| MBR850 |
Guard Ring Die Construction for Transient Protection
|
Kersemi Electronic Co., Ltd.
Kersemi Electronic Co., Ltd...
|
| LMBR2060CTG LMBR20100CTG LMBR20150CTG LMBR2045CTG |
SWITCHMODE Power Rectifiers Guard?Ring for Stress Protection
|
Leshan Radio Company
|
| 309CMQ135 |
SCHOTTKY RECTIFIER
Guard ring for enhanced ruggedness and long term reliability
|
Sangdest Microelectronic (N...
Sangdest Microelectroni...
|
| 81CNQ 81CNQ-SL 81CNQ-SM 81CNQ035 81CNQ040 |
Guard ring for enhanced ruggedness and long term reliability
|
Sangdest Microelectroni...
|
