PART |
Description |
Maker |
NE5550279A-T1 NE5550279A-T1A |
Silicon Power LDMOS FET
|
Renesas Electronics Corporation
|
BLF872 BLF872-2015 |
UHF power LDMOS transistor UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors Quanzhou Jinmei Electro...
|
PXFC191507FC |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
PTVA104501EH |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
PTVA047002EV-15 |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
PTAB182002FCV1R0 |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
PTFB210801FAV1R0XTMA1 PTFB210801FAV1R250 PTFB21080 |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
PXAC201202FC-V2 |
High Power RF LDMOS FET 120W, 28V, 1800 - 2200 MHz
|
Wolfspeed
|
PTF080101S |
Thermally-Enhanced High Power RF LDMOS FET 10 W, 860 - 960 MHz
|
Infineon Technologies AG
|
PTFA211001E |
Thermally-Enhanced High Power RF LDMOS FET 100 W, 2110-2170 MHz
|
Infineon Technologies AG
|