| PART |
Description |
Maker |
| IS42VM16800G IS42SM16800G-6BLI IS42VM16800G-6BLI I |
Auto refresh and self refresh
2M x 16Bits x 4Banks Mobile Synchronous DRAM
|
Integrated Silicon Solu...
|
| M466F0804DT1-L |
8M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh
|
SAMSUNG[Samsung semiconductor]
|
| HM5165805FL HM5165805FLJ-6 HM5165805FTT-5 HM516580 |
64 MEDO DRAM (8-Mword X 8-bit) 8 k Refresh/4 k Refresh
|
HITACHI[Hitachi Semiconductor]
|
| MC54-74HC390 MC54HC390J MC74HC390D MC74HC390N MC54 |
Dual 4-Stage Binary Ripple Counter with ±2 and ±5 Sections HC/UH SERIES, ASYN NEGATIVE EDGE TRIGGERED 3-BIT UP DECADE COUNTER, PDIP16
Dual 4-Stage Binary Ripple Counter with ±2and ±5 Sections
Dual 4-Stage Binary Ripple Counter with ÷2 and ÷5 Sections
Dual 4-Stage Binary Ripple Counter with 2and 5 Sections
DUAL 4-STAGE BLNARY RIPPLE COUNTER WITH *2 AND * 5 SECTIONS
From old datasheet system
Dual 4-Stage Binary Ripple Counter with and Sections
Dual 4-Stage Binary Ripple Counter with 2 and 5 Sections High-Performance Silicon-Gate CMOS
Dual 4-Stage Binary Ripple Counter with and Sections
|
Motorola, Inc.
MOTOROLA[Motorola Inc]
ONSEMI[ON Semiconductor]
|
| HM51W16405TS-5 HM51W16405TS-6 HM51W16405TS-7 HM51W |
16 M EDO DRAM (4-Mword ′ 4-bit) 4 k Refresh/2 k Refresh
16 M EDO DRAM (4-Mword 垄楼 4-bit) 4 k Refresh/2 k Refresh
|
Elpida Memory
|
| IS42RM16200D IS42VM16200D |
Auto refresh and self refresh
|
Integrated Silicon Solu...
|
| IS42VM16160K |
Auto refresh and self refresh
|
Integrated Silicon Solu...
|
| HM5164805FTT-5 HM5165805FTT-5 HM5164805FTT-6 HM516 |
64 M EDO DRAM (8-Mword × 8-bit) 8 k Refresh/4 k Refresh
64 M EDO DRAM (8-Mword ? 8-bit) 8 k Refresh/4 k Refresh
64 M EDO DRAM (8-Mword 隆驴 8-bit) 8 k Refresh/4 k Refresh
|
http://
Elpida Memory
|
| KMM372F213CS KMM372F213CK KMM372F1600BK |
2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 3.3V
16M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V 1,600 × 72的DRAM内存ECC的使6Mx4KK的刷新，3.3
|
Samsung Semiconductor Co., Ltd.
|
| HYB3116405BT-50 HYB5117405BJ-50 HYB3117405BJ-50 HY |
RES 100K-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 10K/REEL-7IN-PA 4M X 4 EDO DRAM, 60 ns, PDSO24
High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70 4M X 4 EDO DRAM, 60 ns, PDSO24
4M×4-Bit Dynamic RAM(2k-Refresh,Hyper Page Mode - EDO)(4M×4动RAM (2K刷新,超级页面EDO))
4M×4-Bit Dynamic RAM(4k-Refresh,Hyper Page Mode - EDO)(4M×4动RAM (4K刷新,超级页面EDO))
4M x 4-Bit Dynamic RAM 2k & 4k Refresh
|
SIEMENS AG
http://
Siemens Semiconductor Group
|
| HD74AC393 HD74AC393FP |
AC SERIES, ASYN NEGATIVE EDGE TRIGGERED 4-BIT UP BINARY COUNTER, PDSO14
Dual Modulo-16-Counter
|
HITACHI[Hitachi Semiconductor]
Hitachi,Ltd.
|
| HEF4510BT |
BCD up/down counter 4000/14000/40000 SERIES, SYN POSITIVE EDGE TRIGGERED 4-BIT BIDIRECTIONAL DECADE COUNTER, PDSO16
|
NXP Semiconductors N.V.
|
