| PART |
Description |
Maker |
| GT10G101 |
10 A, 400 V, N-CHANNEL IGBT
|
|
| DIM400PHM17-A000 |
400 A, 1700 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd.
|
| NGB18N40CLBT4 |
Ignition IGBT in D2ak (Gen3) with Improved SCIS Energy and Vce(on)
18 Amps, 400 Volts N-Channel D2PAK
|
ON Semiconductor
|
| CM400HB-90H |
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
400 A, 4500 V, N-CHANNEL IGBT
|
Mitsubishi Electric Semiconductor
|
| IXGM25N100A IXGP12N100 |
Low VCE(sat), High speed IGBT 50 A, 1000 V, N-CHANNEL IGBT, TO-204AE
IGBT 20 A, 1000 V, N-CHANNEL IGBT, TO-220AB
|
IXYS, Corp.
|
| CT30TM-8 |
128 x 64 pixel format, LED Backlight available 130 A, 400 V, N-CHANNEL IGBT, TO-220F
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR STROBE FLASHER USE
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
Mitsubishi Electric Corporation
|
| PPF360M |
N Channel MOSFET; Package: TO-254; ID (A): 14; RDS(on) (Ohms): 0.2; PD (W): 200; BVDSS (V): 400; Rq: 0.63; 23 A, 400 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
Microsemi, Corp.
|
| VIO50-06P1 VII50-06P1 VDI50-06P1 VID50-06P1 |
CONN/6 POS HDR SHRD SGL RA LK 42.5 A, 600 V, N-CHANNEL IGBT
IGBT Modules in ECO-PAC 2 42.5 A, 600 V, N-CHANNEL IGBT
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| HGT1S10N12 HGT1S10N120BNS HGTP10N120BN HGTG10N120B |
From old datasheet system
35A 1200V NPT Series N-Channel IGBT
35A/ 1200V/ NPT Series N-Channel IGBT
36 MACROCELL 3.3 VOLT ISP CPLD 35 A, 1200 V, N-CHANNEL IGBT, TO-247
35A, 1200V, NPT Series N-Channel IGBT 35 A, 1200 V, N-CHANNEL IGBT
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| IXGP10N60A |
Low VCE(sat) IGBT, High speed IGBT 20 A, 600 V, N-CHANNEL IGBT, TO-220AB
|
IXYS, Corp.
|
| MG100Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
|
|
