| PART |
Description |
Maker |
| ML4641-186 ML4962-275 ML4962-138 ML4520-30 ML4520- |
300 V, SILICON, PIN DIODE
40 GHz - 50 GHz, GALLIUM ARSENIDE, GUNN DIODE
KA BAND, 5.5 pF, 30 V, GALLIUM ARSENIDE, ABRUPT VARIABLE CAPACITANCE DIODE
150 V, SILICON, PIN DIODE
27 GHz - 32 GHz, GALLIUM ARSENIDE, GUNN DIODE
|
|
| MA40414M |
GALLIUM ARSENIDE, KA BAND, MIXER DIODE
|
|
| MS8150-P2613 |
GALLIUM ARSENIDE, mm WAVE BAND, MIXER DIODE
|
MICROSEMI CORP-LOWELL
|
| HSCH-9201TC494 |
GALLIUM ARSENIDE, mm WAVE BAND, MIXER DIODE
|
AGILENT TECHNOLOGIES INC
|
| DGS10-022AS |
Gallium Arsenide Schottky Rectifier 9 A, 220 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-263AB
|
IXYS, Corp.
|
| DGSS10-06CC |
Gallium Arsenide Schottky Rectifier 11 A, 300 V, GALLIUM ARSENIDE, RECTIFIER DIODE
|
IXYS, Corp.
|
| DGS20-015A DGS20-018A |
150V gallium arsenide schottky rectifier
180V gallium arsenide schottky rectifier
|
IXYS
|
| WP710A10YD5V |
The Yellow source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Yellow Light Emitting Diode.
|
Kingbright Corporation
|
| GN01034N |
Gallium Arsenide Devices
|
Panasonic
|
| GN05013N |
Gallium Arsenide Devices
|
Panasonic
|
| GN05009N |
Gallium Arsenide Devices
|
Panasonic
|
| GN01063B |
Gallium Arsenide Devices
|
Panasonic
|
|
