| PART |
Description |
Maker |
| UPD44164365F5-E60-EQ1 UPD44164085 UPD44164085F5-E4 |
18M-BIT DDRII SRAM SEPARATE I/O 2-WORD BURST OPERATION
|
NEC[NEC]
|
| UPD44164362F5-E60-EQ1 UPD44164082 UPD44164082F5-E4 |
18M-BIT DDRII SRAM 2-WORD BURST OPERATION
|
NEC[NEC]
|
| PD44165094BF5-E33-EQ3-A PD44165094BF5-E35-EQ3 PD44 |
18M-BIT QDRTM II SRAM 4-WORD BURST OPERATION
|
Renesas Electronics Corporation
|
| UPD44165362F5-E75-EQ1 UPD44165082 UPD44165082F5-E5 |
(UPD44165082/182/362) 18M-BIT QDRII SRAM 2-WORD BURST OPERATION
|
NEC[NEC]
|
| MCM69Q618TQ8R MCM69Q618 MCM69Q618TQ10 MCM69Q618TQ1 |
64K x 18 Bit Synchronous Separate I/O SRAM
|
MOTOROLA[Motorola, Inc]
|
| UPD44324085F5-E50-EQ2 UPD44324365F5-E50-EQ2 UPD443 |
36M-BIT DDRII SRAM SEPARATE I/O 2-WORD BURST OPERATION
|
NEC[NEC]
|
| CY7C1529AV18-200BZXI CY7C1529AV18-250BZXI |
72-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 8M X 9 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| MC74HC367A MC74HC367AD MC74HC367ADT MC74HC367AN ON |
Telecomm/Datacomm HC/UH SERIES, 6-BIT DRIVER, TRUE OUTPUT, PDSO16
From old datasheet system
Hex 3-State Noninverting Buffer with Separate 2-Bit and 4-Bit Sections
Hex 3-State NonInverting Buffer with Separate 2-Bit and 4-Bit Section High-Performance Silicon-Gate CMOS
|
Motorola Mobility Holdings, Inc.
ONSEMI[ON Semiconductor]
|
| GS8662S36GE-250I |
72Mb Burst of 2 DDR SigmaSIO-II SRAM 2M X 36 DDR SRAM, 0.45 ns, PBGA165
|
GSI Technology, Inc.
|
| IDT72T36135ML5BBG IDT72T36135ML6BBGI IDT72T36135ML |
2.5V 18M-BIT HIGH-SPEED TeraSync FIFO 36-BIT CONFIGURATIONS 524,288 x 36
|
Integrated Device Technology, Inc.
|
