| PART |
Description |
Maker |
| BLF6G22-45 |
Power LDMOS transistor
Product description45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
|
NXP Semiconductors N.V.
|
| BLF7G22LS-100P |
Power LDMOS transistor
100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
|
NXP Semiconductors N.V.
|
| BLL6H0514-25 |
LDMOS driver transistor BLL6H0514-25<SOT467C (LDMOST)|<<http://www.nxp.com/packages/SOT467C.html<1<Always Pb-free,;
LDMOS driver transistor L BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
NXP Semiconductors N.V.
|
| LK822-14 |
RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
| BLF8G20LS-140GV |
Power LDMOS transistor
|
NXP Semiconductors
|
| BLF8G27LS-150GV BLF8G27LS-150V |
Power LDMOS transistor
|
NXP Semiconductors
|
| MRFE6VS25N MRFE6VS25NR1 |
RF Power LDMOS Transistor
|
Freescale Semiconductor, Inc
|
| BLF6G10L-40BRN |
Power LDMOS transistor
|
NXP Semiconductors N.V.
|
| BLP15M7160P-15 |
Power LDMOS transistor
|
NXP Semiconductors
|
| LP702-14 |
RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
| BLF7G20L-160P |
Power LDMOS transistor
|
Philips Semiconductors
|
