| PART |
Description |
Maker |
| HCF4001BEY HCF4001BM1 HCF4001M013TR HCF4001B |
RF Bipolar Transistor; Collector Emitter Voltage, Vceo:3V; Transistor Polarity:Dual P Channel; Power Dissipation:150W; C-E Breakdown Voltage:200V; DC Current Gain Min (hfe):35; Collector Current:15A; DC Current Gain Max (hfe):160
QUAD 2-INPUT NOR GATE
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| 2SC1653 |
High DC current gain.hFE=130 typ.(VCE=3.0V,IC=15mA) High voltage VCEO : 130V
|
TY Semiconductor Co., Ltd
|
| 2SD780 |
Micro package. High DC current gain. hFE: 200TYP.(VCE=1.0V,IC=50mA).
|
TY Semiconductor Co., Ltd
|
| 2SB736 |
Micro package. Complementary to 2SD780. High DC Current Gain: hFE = 200 TYP.
|
TY Semiconductor Co., Ltd
|
| HN1C07F |
Excellent Current Gain(hFE)linearity
|
TY Semiconductor Co., Ltd
|
| BC847PN Q62702-C2374 BC847PNQ62702C2374 Q62702-C15 |
PNP Silicon AF Transistors (For general AF applications High collector current High current gain)
TRANSISTOR SOT363
NPN/PNP Silicon AF Transistor Array (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| 2SA1587 |
High voltage VCEO=-120V High hFE hFE=200 to 700 Small package
|
TY Semiconductor Co., Ltd
|
| A0837 BC876 |
PNP Silicon Darlington Transistors (High current gain High collector current)
From old datasheet system
|
Siemens
Infineon
|
| SL74HC125D HC125 SL74HC125 SL74HC125N |
Bipolar Transistor; Power Dissipation, Pd:0.15W; DC Current Gain Min (hfe):40; C-E Breakdown Voltage:15V; Power (Ptot):150mW; Transistor Polarity
Quad 3-State Noninverting Buffers
|
System Logic Semiconductor Co., Ltd.
SLS[System Logic Semiconductor]
|
| BC878 BC880 |
PNP Silicon Darlington Transistors (High current gain High collector current)
|
Siemens Semiconductor Group
|
| C62702-C941 C62702-C942 C62702-C943 |
PNP Silicon Darlington Transistors (High current gain High collector current)
|
SIEMENS AG
Siemens Semiconductor Group
|
